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Manufacturing method of vld terminal and vld terminal

A manufacturing method and terminal technology, applied in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as uneven impurity concentration changes, concentration fluctuations, and reduced terminal efficiency

Active Publication Date: 2022-05-20
JILIN SINO MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The implementation method of this process is relatively simple, but the problem is that the change of impurity concentration in the lateral direction is not smooth, and there are very obvious concentration fluctuations, thus reducing the terminal efficiency

Method used

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  • Manufacturing method of vld terminal and vld terminal
  • Manufacturing method of vld terminal and vld terminal
  • Manufacturing method of vld terminal and vld terminal

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Embodiment Construction

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. the embodiment. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] The manufacture of the existing VLD terminal is realized by successively performing the operation of adjusting the area of ​​the masking window, one photolithography operation, and one injection operation. The process flow includes: see figure 2 As shown, on the surface of the semiconductor single crystal material 1, a masking window with varying width and density is formed o...

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Abstract

The invention provides a method for manufacturing a VLD terminal and a VLD terminal, relating to the field of semiconductor devices, including forming a masking window on the surface of a semiconductor single crystal material through an etching process; depositing a polysilicon layer on the surface of the semiconductor single crystal material; obtaining a mask stencil, and divide the mask into multiple partitions; determine the window area of ​​each partition according to the preset width of the first engraved area; based on the window area of ​​each partition, open the area according to the preset second engraved area The width of each partition is carved, and multiple injection windows are formed on the mask; photoresist is formed on the polysilicon layer; the mask is used to form an implantation masking window on the photoresist through a photolithography process; in polysilicon Impurities are implanted into the layer to form VLD terminations. The invention can continuously change the impurity concentration in the lateral direction of the VLD terminal, reduce the concentration fluctuation and improve the terminal efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a manufacturing method of a VLD terminal and a VLD terminal. Background technique [0002] Among terminal technologies of semiconductor devices, Variation of Lateral Doping (VLD) terminal technology is widely used due to its relatively high terminal efficiency. The existing process realization method is mainly realized by sequentially performing an operation of adjusting the area of ​​the masking window, a photolithography operation, and an implantation operation. At the terminal of the chip, a strip-shaped closed masking film is formed through a photolithography process, and the width and density of the masking film window change according to certain rules; then impurity is injected into the diffusion process, and the impurity is diffused laterally and vertically from the surface to form a lateral The VLD terminal whose doping concentration changes and distributes according...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/033
CPCH01L21/26506H01L21/0337Y02P70/50
Inventor 左义忠
Owner JILIN SINO MICROELECTRONICS CO LTD