Forming method of semiconductor structure

Abstract

The invention discloses a forming method of a semiconductor structure. The method comprises the following steps: forming a laminated structure on a semiconductor substrate; forming a patterned mask layer on the laminated structure; forming a contact hole and a groove in the laminated structure; and forming a second conductive channel and a third conductive channel in the contact hole and the groove, wherein the patterned mask layer comprises a contact hole pattern and a groove pattern corresponding to the first conductive channel, and the heights of the contact hole pattern and the groove pattern are set by the material and height of the first dielectric layer and the second dielectric layer. According to the method provided by the invention, a patterned mask layer is formed by adopting agray-scale photoetching method, a nanoimprint method, a gray-scale mask plate photoetching method or an ion beam gas-assisted deposition method, a semiconductor structure is etched by using dry etching, and patterns of the mask layer are transferred into a laminated structure, so that the process steps are reduced, and the process complexity is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, semiconductor devices already have deep submicron structures. As the number of devices contained in integrated circuits continues to increase, and the size of devices continues to shrink due to the increase in integration, the high-performance, high-density connections between devices are not only performed in a single interconnection layer, but also in multiple layers. interconnection between. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer insulating film interposed therebetween for connecting semiconductor devices. In particular, a multi-layer interconnection structure formed by a dual-damascene proces...

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Problems solved by technology

In the process of forming the trench first, the mask pattern for forming the contact hole needs to control the bottom profile, and in the process of forming the contact hole first, the mask for forming the trench needs to cover the contact hole, so both processes have complex processes question

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