Sputtering target for transparent conductive film

A technology of transparent conductive film and sputtering target, which is applied in the direction of sputtering coating, conductive layer on insulating carrier, circuit, etc., can solve the problems of high resistance, poor productivity, low etching processability of conductive film, etc., and achieve high Resistivity, less nodules and arcing, and high film resistivity effects

Active Publication Date: 2019-12-06
MITSUI MINING & SMELTING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the etching workability of any conductive film is low
[0007] In addition, a large number of high-resistance films have been reported, but the resistance of the target used for the film formation of the film also becomes high
If the resistance of the target is high, sputtering cannot be performed with a DC power supply, and a high-resistance film must be produced with an RF power supply, so productivity is poor

Method used

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  • Sputtering target for transparent conductive film
  • Sputtering target for transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0055] The measurement methods used in the following Examples and Comparative Examples are shown below.

[0056] 1. The relative density of the target

[0057] The relative density of the sputtering target for transparent conductive films was measured based on the Archimedes method. Specifically, by dividing the mass of the target in the air by the volume (the mass of the target in water / the specific gravity of water at the measurement temperature), the theoretical density ρ (g / cm 3 ) as the relative density (unit: %).

[0058] ρ=((C1 / 100) / ρ1+(C2 / 100) / ρ2+…+(Ci / 100) / ρi) -1 (X)

[0059] (In the formula, C1~Ci represent the contents (mass%) of the constituent substances of the target, respectively, and ρ1~ρi represent the densities (g / cm3) of each constituent substance corresponding to C1~Ci 3 ). )

[0060] In the following examples and comparative examples, the substance (raw material) used for the manufacture of the target is In 2 o 3 , SnO 2 , SiO 2 , therefore, for ...

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Abstract

A sputtering target for a transparent conductive film comprises an oxide sintered compact having, as constituent elements, In, Sn, Si and O, or In, Si and O, the content ratio of In being 70.0% by mass to less than 85.0% by mass in terms of In2O3, the content of ratio of Sn being from 0% by mass to 10.0% by mass in terms of SnO2, and the content of Si being greater than 15.0% by mass but not exceeding 20.0% by mass in terms of SiO2. In X-ray diffraction measurement of this sputtering target, all of the Si appears as a peak of an indium silicate compound having a thortveitite structure. The sputtering target for conductive film of the present application has a low resistivity, DC sputtering can be carried out, and there is minimal occurrence of nodules and arcing. In addition, by sputteringit is possible to form a transparent conductive film having high film resistivity and high etching workability.

Description

technical field [0001] The present invention relates to a sputtering target for a transparent conductive film. Specifically, it relates to a sputtering target for a transparent conductive film capable of performing DC sputtering and forming a transparent conductive film having high etching processability. Background technique [0002] A transparent conductive film used in an in-cell capacitive touch panel requires high resistance and high transmittance in order to prevent low-frequency noise from disturbing the display operation. This is because high frequency signals for touch sensing are blocked when the conductive film is low resistance. [0003] This conductive film is usually formed by sputtering a sputtering target. [0004] ITO is mainly used as a high-transmittance material, but ITO cannot be used for a conductive film of an in-cell capacitive touch panel because of its low electrical resistance. [0005] As a technique for obtaining a high-resistance material, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/01C23C14/08H01B5/14H01B13/00
CPCC04B35/01C23C14/08C23C14/34H01B5/14H01B13/00C23C14/3414
Inventor 矢野智泰儿平寿博立山伸一中村信一郎
Owner MITSUI MINING & SMELTING CO LTD
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