Hybrid PiN junction Schottky diode and manufacturing method thereof

A technology of Schottky diodes and diodes, which is applied in the field of microelectronics, can solve the problems of unreasonable structural design and reduce the anti-surge current capability of mixed PiN junction Schottky diodes, so as to improve the anti-surge current capability and avoid partial Fever effect

Active Publication Date: 2019-12-13
山东天岳电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the structural design of the existing hybrid PiN junction Schottky diodes is not reason

Method used

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  • Hybrid PiN junction Schottky diode and manufacturing method thereof
  • Hybrid PiN junction Schottky diode and manufacturing method thereof
  • Hybrid PiN junction Schottky diode and manufacturing method thereof

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Embodiment Construction

[0039] In order to explain the overall concept of the present application more clearly, the following detailed description will be given by way of examples in combination with the accompanying drawings.

[0040] The embodiment of the present application discloses a hybrid PiN junction Schottky diode. For the convenience of description, the present application takes a hexagonal cell as an example, as figure 1 and figure 2 Shown:

[0041] The conductivity type of the epitaxial layer is N type, and the conductivity type of the semiconductor region is P+ type, wherein the semiconductor region includes: a plurality of cells, and each cell includes: a first region 110 and a plurality of second regions 120, wherein the first Region 110 is a wide P+ region, and second region 120 is a narrow P+ region. The depth of the wide P+ region in the epitaxial layer is the same as the depth of the narrow P+ region in the epitaxial layer. The width of the wide P+ region is greater than the wi...

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PUM

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Abstract

The invention discloses a hybrid PiN junction Schottky diode and a manufacturing method thereof. The hybrid PiN junction Schottky diode comprises a plasma diffusion layer and a semiconductor region, wherein the semiconductor region is arranged below the surface of an epitaxial layer; the semiconductor region comprises a plurality of cells, and each cell comprises a first region and a plurality ofsecond regions; the plasma diffusion layer is arranged below the surface of the epitaxial layer; the plasma diffusion layer comprises a plurality of plasma diffusion channels; each plasma diffusion channel is communicated with the first regions in the two cells and penetrates through the second regions in the cells; and the first region, the plurality of second regions, the plasma diffusion layerand the epitaxial layer form a PN junction of the hybrid PiN junction Schottky diode. Thus, the surge current resistance of the hybrid PiN junction Schottky diode can be improved.

Description

technical field [0001] The present application relates to the technical field of microelectronics, in particular to a mixed PiN junction Schottky diode and a manufacturing method. Background technique [0002] In the case of a current surge, the temperature of the PN junction in the diode rises rapidly, which may cause the reliability of the diode to decrease, and even performance degradation and failure to occur. Therefore, diodes with excellent anti-surge current capability can effectively dissipate these energies without degradation or failure, thereby providing a higher safety margin for power equipment and improving the reliability and life of power equipment. [0003] The hybrid PiN junction Schottky diode has lower resistivity and higher current conduction capability under the condition of large surge current. Therefore, when designing a circuit, designers usually choose a hybrid PiN junction Schottky diode as a device for anti-surge current. [0004] However, the s...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/868H01L21/329
CPCH01L29/868H01L29/872H01L29/66136H01L29/66143Y02P70/50
Inventor 任娜
Owner 山东天岳电子科技有限公司
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