Composite PiN Schottky diode with plasma diffusion layer

A plasma and diffusion layer technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of device reliability reduction, performance degradation, failure, etc.

Active Publication Date: 2020-09-08
元山(济南)电子科技有限公司
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In the case of surge impact, the large current multiplied by the voltage drop of the device will form an instantaneous energy overshoot, which will flow into the device in a relatively short period of time, resulting in a rapid increase in the junction temperature of the device, which may cause the reliability of the device to decrease, and even cause performance failure. Degradation and failure

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  • Composite PiN Schottky diode with plasma diffusion layer
  • Composite PiN Schottky diode with plasma diffusion layer
  • Composite PiN Schottky diode with plasma diffusion layer

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Embodiment Construction

[0053] In order to explain the overall concept of the present application more clearly, the following detailed description will be given by way of examples in combination with the accompanying drawings.

[0054] The material of the semiconductor plays a decisive role in the performance of the semiconductor. The band gap of the silicon carbide semiconductor material is about three times that of the silicon material, and it has a higher critical breakdown electric field strength, a higher thermal conductivity, and a lower cost. Significant carrier concentration and higher saturation drift velocity make SiC an ideal material for high-voltage, high-temperature, high-power devices. For power diodes based on silicon carbide semiconductor materials, there are two technical routes for commercial devices, namely the junction barrier Schottky diode structure and the composite PiN Schottky diode structure.

[0055] Junction barrier Schottky diodes alternately arrange narrow P+ regions in...

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Abstract

The invention relates to a composite PiN Schottky diode with a plasma diffusion layer, comprising: a second conductive region consisting of cells and a plasma diffusion layer; a plasma diffusion layerwhich comprises a plurality of plasma diffusion channels with strip-shaped structures, wherein the plasma diffusion channel is used for connecting a part of cells in the plurality of cells forming the second conductive region, so that plasma generated by the device under the condition of bearing surge current impact is uniformly diffused to the surface of the device through the plasma diffusion channel. According to the invention, the plasma diffusion layer is designed, a plurality of independent cellular structures are connected together, the current inside the device and the generated heatcan be uniformly diffused to each region of the whole device under the condition that the device is impacted by a large surge current, and the device is effectively prevented from being damaged due tolocal overheating, so that the surge current resistance of the device is improved, and the reliability of the device is enhanced.

Description

technical field [0001] The invention relates to the technical field of power diodes, in particular to a composite PiN Schottky diode, in particular to a composite PiN Schottky diode with a plasma diffusion layer. Background technique [0002] Power devices include power diodes and power switch tubes, and power diodes have two operating modes in circuit applications: conduction mode and blocking mode, and for conduction mode, in addition to normal current conditions, there are occasional surges Abnormal working conditions of high current. [0003] A device's ability to withstand surge current is a key metric describing its robustness under extreme current surge conditions. Devices with excellent anti-surge current capability can effectively dissipate these energies without degradation or failure, thereby providing a higher safety margin for power equipment and improving the reliability and life of power equipment. [0004] In general, power electronic devices are subject to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872
CPCH01L29/872H01L29/0696H01L29/0615H01L29/0619
Inventor 任娜刘旺黄治成李宛曈
Owner 元山(济南)电子科技有限公司
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