SiC JBS cellular structure and preparation method thereof

Abstract

A SiC JBS cellular structure comprises first cells and a second cell; a plurality of first cells are arranged on the periphery of the second cells; the cross sections of the filling area of the first cells are sequentially provided with a third pattern, a second pattern and a first pattern from inside to outside; the area types sequentially correspond to an SBD area, a P + area and an SBD area or sequentially correspond to the P + area, the SBD area and the P + area; the cross section of the filling area of the second cell is a fourth pattern, and the region type is a P-type doped area; and the first graph is a regular hexagon, the second graph is a regular hexagon, the third graph is a circle or a regular hexagon, and the fourth graph is a regular hexagon. According to the invention, the size of SiC-JBS pain current is controlled by controlling the geometric dimension of the pattern of the cellular structure and the relative distance between the cells, and the purpose of increasing surge current is achieved by reasonably distributing the P + region.

Description

technical field [0001] The invention belongs to the technical field of power device design, and relates to a SiC JBS cell structure and a preparation method. Background technique [0002] Silicon carbide (SiC) is a binary semiconductor compound. It is the only solid compound among the elements of the IV main group of the periodic table and the only stable compound of Si and C. Its physical and chemical properties have many unique features. When the SiC material is crystallized, each carbon atom is closely surrounded by 4 silicon atoms according to the regular tetrahedral structure, and each silicon atom is also closely surrounded by 4 carbon atoms in the same way, nesting each other to form a complete crystal . The nearest neighbor atomic distance is 0.189nm, so the roughness at the SiC atomic level is about 0.2nm. Silicon carbide crystals conform to the principle of close packing in the process of crystallization and structure, and the hardness of SiC material is high, se...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems existing in the prior art, the present invention provides a SiC JBS cell structure and preparation method, which effectively solves the problem of insufficient leakage current and anti-surge current capability when the cells of the JBS structure and the Schottky region are alternately arranged. balance problem

Images