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Transistor Device

A technology for transistors and transistor units, applied in transistors, electro-solid devices, semiconductor devices, etc., can solve the problems of increasing the thermally unstable current range and current density limit of transistor devices, etc.

Pending Publication Date: 2019-12-27
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been observed that reducing the size of the transistor cell of a power transistor often leads to an increase in the current density limit, which corresponds to an increase in the current range in which the transistor device is thermally unstable

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0082] Example 1. A transistor device comprising: a semiconductor body; a source conductor on top of the semiconductor body; a source clip on top of the source conductor and electrically connected to the source conductor; a first active device region disposed on In the semiconductor body, covered by the source conductor and the source clip, and comprising at least one device cell; and a second active device region, arranged in the semiconductor body, covered by the region of the source conductor not covered by the source clip and comprising At least one device unit, wherein the first active device region has a first area-specific on-resistance, wherein the second active device region has a second area-specific on-resistance, and wherein the second area-specific on-resistance is greater than the first area specific on-resistance.

example 2

[0083] Example 2. The transistor device of example 1, wherein a ratio between the second area specific on-resistance to the first area specific on-resistance is at least 1.2, at least 1.5, at least 2, or at least 5.

example 3

[0084] Example 3. The transistor device of any combination of examples 1 to 2, wherein at least one device cell of the first active device region comprises at least one first type transistor cell, wherein the at least one first type transistor cell comprises: a drift region; a source region connected to the source conductor; a body region disposed between the source region and the drift region; and a gate electrode adjacent to the body region, dielectrically insulated from the body region by a gate dielectric, and connected to a gate node .

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PUM

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Abstract

A transistor device is disclosed. The transistor device includes: a semiconductor body 100; a source conductor 21 on top of the semiconductor body 100; a source clip 31 on top of the source conductor21 and electrically connected to the source conductor 21; a first active device region 110 arranged in the semiconductor body 100, covered by the source conductor 21 and the source clip 31, and including at least one device cell 10; and a second active device region 120 arranged in the semiconductor body 100, covered by regions of the source conductor 21 that are not covered by the source clip 31,and including at least one device cell 10, 10`. The first active device region 110 has a first area specific on-resistance and the second active device region 120 has a second area specific on-resistance, the second area specific on-resistance being greater than the first area specific on-resistance.

Description

technical field [0001] The present disclosure relates generally to transistor devices, and more particularly to power transistor devices. Background technique [0002] Power transistor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are widely used as electronic switches in various types of electronic applications. Typically, a power transistor device includes a plurality of transistor cells integrated in a semiconductor body. There are ongoing efforts to reduce the size of these transistor cells in order to reduce the size of the overall transistor device while maintaining a given current rating. [0003] However, reducing the size of power transistors may worsen the temperature management of the transistor devices. Basically, it is desirable to operate transistor devices in a thermally stable state. A transistor device is thermally stable when the temperature of the transistor device results in a reduced current flow through the transistor d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L27/088
CPCH01L29/7827H01L29/0684H01L27/088H01L21/823418H01L21/823487H01L29/7813H01L29/41766H01L29/407H01L29/0696H01L29/7805H01L29/41741H01L29/4238H01L24/05H01L29/7397H01L2224/0603H01L2224/40245H01L2224/32245H01L2924/181H01L24/40H01L2224/05647H01L2224/05624H01L2924/1033H01L2924/10272H01L2924/10253H01L2924/10329H01L2224/37147H01L2224/37124H01L2224/84801H01L2924/13091H01L2924/13055H01L24/37H01L2224/40225H01L2224/33181H01L2224/32225H01L2224/83801H01L2224/8385H01L2224/73263H01L24/32H01L2924/1304H01L24/83H01L24/84H01L2224/92246H01L24/92H01L24/73H01L2924/00014H01L2224/45014H01L2224/48247H01L2224/48227H01L24/48H01L2224/73271H01L2224/04026H01L2224/04042H01L2224/04034H01L23/49562H01L23/49524H01L23/49568H01L2924/00012H01L2924/01029H01L2224/45099H01L2224/73221H01L29/7811H01L29/4236
Inventor C.M.博杨恰努L.陈S.索辛A.C.G.伍德
Owner INFINEON TECH AG