Wafer surface flatness detection method and incomplete exposure unit flatness detection compensation method

Abstract

The invention relates to a wafer surface flatness detection method and an incomplete exposure unit flatness detection compensation method, and relates to a semiconductor integrated circuit manufacturing technology. S-shaped scanning is still adopted for flatness detection for a complete exposure unit and an incomplete exposure unit with the number of detection sensors being greater than or equal to 2 within the range on the surface of a wafer. For an incomplete exposure unit with the number of detection sensors being less than 2 within the range at the edge, rotation is conducted so as to enable the scanning direction of a photoetching machine to be approximately perpendicular to a connecting line between two points at which the incomplete exposure unit on the wafer is tangent to the waferedge, thereby enabling more than one detection sensor to fall into the incomplete exposure unit to compensate the exposure unit of the photoetching machine, acquiring accurate flatness information inthe whole wafer surface, reducing the occurrence of defocusing, and ensuring the pattern quality after exposure in the whole wafer.

Description

technical field [0001] The invention relates to semiconductor integrated circuit manufacturing technology, in particular to a wafer surface flatness detection and an incomplete exposure unit flatness detection and compensation method. Background technique [0002] In the semiconductor integrated circuit manufacturing technology, with the continuous improvement of the integration of semiconductor integrated circuits and the development of semiconductor technology, the size of semiconductor devices is continuously reduced, and the key dimensions are becoming smaller and smaller, which brings higher The requirements and challenges of lithography, the process window of lithography is also greatly reduced. In order to obtain accurate patterns, it is necessary to ensure that lithography exposure is performed at the best focal length, so as to minimize the probability of defocus. [0003] In the existing exposure process, before the wafer is exposed, the topography of the wafer sur...

AI Technical Summary

Problems solved by technology

Under this requirement, an incomplete exposure unit with a small crystal edge cannot obtain an accurate Y value, because an exposure unit with a small area may not be able to satisfy two complete detection sensor scans at the same time.

The lack of Y value will cause inaccurate flatness in the exposure unit, resulting in wrong flatness information during exposure, and in serious cases, it will cause defocus

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