Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method

A technology of surface flatness and exposure unit, which is applied in the direction of measuring devices, optical devices, instruments, etc., can solve problems such as inaccurate flatness, wrong flatness information, defocusing, etc., and achieve the goal of reducing defocusing and ensuring image quality Effect

Active Publication Date: 2021-06-15
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
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AI Technical Summary

Problems solved by technology

Under this requirement, an incomplete exposure unit with a small crystal edge cannot obtain an accurate Y value, because an exposure unit with a small area may not be able to satisfy two complete detection sensor scans at the same time.
The lack of Y value will cause inaccurate flatness in the exposure unit, resulting in wrong flatness information during exposure, and in serious cases, it will cause defocus

Method used

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  • Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method
  • Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method
  • Wafer surface flatness detection and incomplete exposure unit flatness detection compensation method

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Embodiment Construction

[0036] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0037] In an embodiment of the present invention, a method for detecting the flatness of a wafer surface is provided. The method for detecting the flatness of a wafer surface in an embodiment of the present invention includes: S1: providing a wafer, and exposing the wafer according to an exposure program To form a plurality of exposure units; S2: Determine the complete exposure unit and the incomplete exposure unit on the wafer, and calculate the number B of detection sensors in the incomplete exposure unit, the ca...

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Abstract

The invention relates to a method for detecting the flatness of a wafer surface and detecting and compensating for the flatness of an incomplete exposure unit, and relates to the manufacturing technology of a semiconductor integrated circuit. Still use "S" shape scanning for flatness detection, and for the incomplete exposure unit whose detection sensor is less than 2 within the range of the edge, rotate so that the scanning direction of the lithography machine is consistent with the incomplete exposure unit on the wafer and the crystal edge The line between two tangent points tends to be vertical, so that more than one detection sensor falls into the incomplete exposure unit to compensate for the exposure unit of the lithography machine to obtain accurate flatness in the entire wafer surface information, reducing the occurrence of defocus and ensuring pattern quality after exposure across the entire wafer.

Description

technical field [0001] The invention relates to semiconductor integrated circuit manufacturing technology, in particular to a wafer surface flatness detection and an incomplete exposure unit flatness detection and compensation method. Background technique [0002] In the semiconductor integrated circuit manufacturing technology, with the continuous improvement of the integration of semiconductor integrated circuits and the development of semiconductor technology, the size of semiconductor devices is continuously reduced, and the key dimensions are becoming smaller and smaller, which brings higher The requirements and challenges of lithography, the process window of lithography is also greatly reduced. In order to obtain accurate patterns, it is necessary to ensure that lithography exposure is performed at the best focal length, so as to minimize the probability of defocus. [0003] In the existing exposure process, before the wafer is exposed, the topography of the wafer sur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/30
CPCG01B11/30
Inventor 王建涛
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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