Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Evaporating method of revolution type semiconductor evaporation table

An evaporation table and semiconductor technology, applied in semiconductor/solid-state device manufacturing, vacuum evaporation plating, coating and other directions, can solve the problems of low evaporation accuracy, low efficiency, uneven metal film, etc., to achieve high evaporation accuracy, High efficiency and uniform metal film effect

Active Publication Date: 2020-01-03
苏州华楷微电子有限公司
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the placement form of the slide cover, the current evaporation methods include planetary evaporation method (Planetary) and revolution evaporation method. In the planetary evaporation method, several slide covers are placed obliquely around the evaporation chamber and rotated by the rotating ring. , the planetary evaporation table can evaporate multiple slide covers at one time, and multiple wafers are fixed on each slide cover, so more wafers can be evaporated at one time, but the evaporation accuracy of this evaporation table is not good. High, because the slide cover is in a tilted state during evaporation, so the distance between the wafer on the slide cover and the crucible is not equal, so the metal film obtained by evaporation is not uniform
In the current revolution evaporation method, a carrier cover driven by a rotating motor is placed directly above the crucible. During evaporation, the carrier cover is directly above the crucible, and the distance between the wafer on the carrier cover and the crucible is equal. When the metal gas rises, it will adhere to the wafer of the slide cover. Compared with the planetary evaporation method, the precision of this evaporation method is higher, but it needs to open the cover frequently to replace the wafer, and then frequently vacuumize. The time of evaporation is longer than the evaporation time, so the efficiency of this revolution evaporation method is very low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Evaporating method of revolution type semiconductor evaporation table
  • Evaporating method of revolution type semiconductor evaporation table
  • Evaporating method of revolution type semiconductor evaporation table

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The present invention will be described in further detail below through specific examples.

[0041] The embodiment of the invention discloses an evaporation method for a revolving semiconductor evaporation table.

[0042] S1. Preliminary preparation of equipment

[0043] S11. Provide a revolving evaporation table, the evaporation table includes a lower shell 2 and an upper cover 1, the inner space between the lower shell 2 and the upper cover 1 forms an evaporation chamber, and the bottom of the evaporation chamber is provided with a crucible 13 , the metal for evaporation is placed in the crucible 13, the bottom of the shell is provided with an electron beam generating device and a vacuum device for vacuuming the evaporation chamber, and a rotating ring 10 is mounted on the inner wall of the lower shell 2 , the rotating ring 10 is driven by a rotating power device, and several slide covers 8 are evenly distributed on the circumference of the rotating ring 10, and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an evaporating method of a revolution type semiconductor evaporation table. The evaporating method comprises the steps that S1, previous preparations of equipment are made, wherein S11, the revolution type evaporation table is provided; and S12 a vacuumizing device is started to vacuumize the interior of an evaporation cavity; S2, a taking arm deviates to take a slide coveroff from a rotary ring; S3, the taking arm deviates by 90 degrees to move the slide cover to an evaporation station; S4, the slide cover on the evaporation station rotates; S5, an electron beam generating device is started to generate high-energy electron beams, and metal in a crucible is heated to heated to evaporate; S6, after slide cover evaporation is completed, the taking arm reversely deflects by 90 degrees, and the slide cover obtained after evaporation is completed is placed on the rotary ring; S7, the rotary ring rotates to rotate another slide cover to a cover taking station; S8, the steps 2 to 6 are repeated until evaporation of all the slide covers on the rotary ring is completed. According to the evaporating method, evaporation on multiple slide covers can be completed crucible, the evaporation efficiency is improved, the evaporation precision is improved, and the vacuumizing time is shortened.

Description

technical field [0001] The invention relates to an evaporation method using a revolving semiconductor evaporation table, which belongs to the technical field of semiconductors. Background technique [0002] Evaporation table is a commonly used semiconductor equipment, its main structure includes a lower shell and an upper cover, the inner space between the lower shell and the upper cover forms an evaporation chamber, the bottom of the evaporation chamber is provided with a crucible for placing metal, The bottom of the housing is provided with an electron beam generating device and a vacuum device for evacuating the evaporation chamber. A slide cover is provided in the evaporation chamber, and the slide cover is used to place semiconductor wafers. The method is: first vacuumize the evaporation chamber to maintain a certain vacuum, place the metal in the crucible, and then the electron beam generating device generates a high-energy electron beam, and under the action of the ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/30C23C14/50C23C14/56H01L21/67
CPCC23C14/30C23C14/505C23C14/568H01L21/67011
Inventor 景苏鹏黄鹏飞刘卫平
Owner 苏州华楷微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products