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Grinding back method, substrate wafer and electronic device
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A technology for substrates and conditions, which is applied in the manufacture of electrical components, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as abnormal polishing results, long time The effect of the process
Active Publication Date: 2022-03-18
FUJIAN NORSTEL MATERIAL TECH CO LTD
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Problems solved by technology
The above-mentioned backgrinding method is very complicated, and there are many factors affecting the polishing process, such as the number of revolutions, pressure, slurry, etc., which will cause abnormal polishing results. In addition, multiple hard processes are required before polishing, such as copper polishing, grinding and other processes, which consume a lot of time. Time control is difficult, and semiconductor materials are prone to warping and cracking during the process, which will affect the efficiency and quality of silicon carbide regrinding processing
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Embodiment 1
[0100] The grinding back method includes the following steps:
[0101] 1. Put the silicon carbide wafer in the crystal boat, put the crystal boat into the alkaline cleaning solution for ultrasonic cleaning, the temperature is 60°C, the cleaning time is 40 minutes, and dry after the end;
[0102] 2. Wipe the quartz carrier plate with alcohol and a dust-free cloth, and then place the cleaned silicon carbide wafers one by one on the clean quartz carrier plate;
[0103] 3. Turn on the inductively coupled plasma (ICP) etching machine, transfer the quartz carrier plate into the inductively coupled plasma chamber, and evacuate to 6×10 -3 Pa;
[0104] 4. Induct SF into the inductively coupled plasma cavity 6 The gas performs the first plasma etching, etching for 100 minutes, depending on the thickness of the first etching, and finally injecting O 2 Perform cleaning purge, O 2 The gas flow rate is 5 sccm;
[0105] 5. Take out the silicon carbide wafer and blow it with nitrogen for...
Embodiment 2
[0116] Grinding back method is the same as embodiment 1, and difference is the conditions of the first plasma etching and the second plasma etching, wherein the conditions of the first plasma etching and the second plasma etching are shown in the following table 2:
[0117] Table 2
[0118] Source power (KW) Bias power(KW) Etching gas flow rate (sccm) first plasma etch 300 50 80 second plasma etch 300 50 80
Embodiment 3
[0120] Grinding back method is the same as embodiment 1, and difference is the conditions of the first plasma etching and the second plasma etching, wherein the conditions of the first plasma etching and the second plasma etching are shown in the following table 3:
[0121] table 3
[0122] Source power (KW) Bias power(KW) Etching gas flow rate (sccm) first plasma etch 1000 200 20 second plasma etch 2000 350 60
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Abstract
The invention provides a grinding back method, a substrate wafer and an electronic device, and relates to the field of semiconductor technology. The grinding back method includes: using SF 6 As an etching gas, the first plasma etching is performed on the object to be ground; using CH 4 performing second plasma etching on the object to be ground after the first plasma etching as an etching gas; performing chemical mechanical polishing on the object to be ground after the second plasma etching. The regrinding method can shorten the processing time, reduce the risk of breaking the object to be reground, and reduce the removal amount of the object to be reground during chemical mechanical polishing, thereby achieving the effect of reducing cost and increasing production capacity.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a grinding back method, a substrate wafer and electronic devices. Background technique [0002] Among the substrate materials, such as semiconductor materials, the most common material of the third generation is silicon carbide. The grinding methods of silicon carbide mainly include the following methods: 1. SMD, copper polishing, unloading, cleaning and polishing, and finally cleaning and testing; 2. Crystal grinding machine processing, polishing to remove processing damage, and final cleaning and inspection. The above-mentioned backgrinding method is very complicated, and there are many factors affecting the polishing process, such as the number of revolutions, pressure, slurry, etc., which will cause abnormal polishing results. In addition, multiple hard processes are required before polishing, such as copper polishing, grinding and other processes. Time control is dif...
Claims
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