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Quartz wafer polishing technology

A quartz wafer and process technology, applied in the field of quartz wafer grinding technology, can solve problems to be further improved, etc., and achieve the effects of precise grinding, avoiding retention, and reducing residues

Inactive Publication Date: 2020-01-10
菲特晶(南京)电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Chemical mechanical polishing technology can obtain a surface that is both flat and free from scratches and impurities. First, the surface material of the quartz wafer chemically reacts with the oxidant and catalyst in the polishing solution to form a soft layer that is relatively easy to remove. Then Under the mechanical action of abrasives and polishing pads in the polishing liquid, the soft layer is removed, the surface of the workpiece is exposed again, and then the chemical reaction is carried out, so that the surface polishing of the workpiece is completed in the alternating process of chemical action and mechanical action, but If this type of method wants to grind a quartz wafer that meets the technical level, the grinding process is very important and needs to be further improved;

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] S1, the first polishing and grinding: the grinding pressure is 5psi, the grinding speed is 100rpm, and the quartz wafer is polished and polished for the first time;

[0025] S2, the first cleaning: when the polishing and grinding intensity of the monitoring system is 75% of the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 65 seconds, and the cleaning flow rate is 600ml / min. The pH value of the cleaning solution is 2;

[0026] S3, the second polishing and grinding: the grinding pressure is 3psi, the grinding speed is 80rpm, and the quartz wafer is polished and polished for the second time;

[0027] S4, the second cleaning: When the polishing intensity of the monitoring system reaches the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the second time, wherein the cleaning time is 90 seconds, the cleaning...

Embodiment 2

[0031] S1. The first polishing and grinding: the polishing pressure is 5.5 psi, the grinding speed is 110 rpm, and the quartz wafer is polished and polished for the first time.

[0032] S2, the first cleaning: when the polishing and grinding intensity of the monitoring system is 75% of the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 68 seconds, and the cleaning flow rate is 700ml / min. The pH value of the cleaning solution is 2.5.

[0033] S3. The second polishing and grinding: the polishing pressure is 3.5 psi, the grinding speed is 85 rpm, and the quartz wafer is polished and polished for the second time.

[0034] S4, the second cleaning: when the polishing intensity of the monitoring system reaches the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the second time, wherein the cleaning time is 95 seconds, ...

Embodiment 3

[0038] S1, the first polishing and grinding: the grinding pressure is 6psi, the grinding speed is 120rpm, and the quartz wafer is polished and polished for the first time;

[0039] S2, the first cleaning: when the polishing intensity of the monitoring system is 75% of the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 70 seconds, and the cleaning flow rate is 800ml / min. The pH value of the cleaning solution is 3;

[0040] S3, the second polishing and grinding: the grinding pressure is 4psi, the grinding speed is 90rpm, and the quartz wafer is polished and polished for the second time;

[0041] S4, the second cleaning: when the polishing intensity of the monitoring system reaches the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the second time, wherein the cleaning time is 105 seconds, the cleaning flow rate i...

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PUM

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Abstract

The invention provides a quartz wafer polishing technology, and particularly relates to the field of quartz wafer production. The technology includes the steps that S1, the polishing pressure is set to be 5-6 psi, and the polishing speed is set to be 100-120 rpm; S2, when the polishing grinding strength of a monitoring system is 75% of the highest strength, polishing grinding is stopped, the cleaning time is set to be 65-70 seconds, and the cleaning flow is set to be 600-800 ml / min; S3, the grinding pressure is set to be 3 to 4 psi, and the grinding speed is set to be 80 to 90 rpm; S4, when the polishing grinding strength of the monitoring system is the highest strength, polishing grinding is stopped, the cleaning time is set to be 90-105 seconds, and the cleaning flow is set to be 600-800ml / min; S5, the grinding pressure is 1-2 psi, the grinding speed is 65-75 rpm, and polishing grinding is conducted for the third time; and S6, the grinding time is 5-10% of the sum of the duration offirst-time polishing grinding and the duration of second-time polishing grinding, polishing grinding is stopped, the cleaning time is 50-60 seconds, and the cleaning flow is 400-500 ml / min. The grinding technology is precise in size, and the production requirement can be easily met.

Description

technical field [0001] The invention belongs to the field of quartz wafer production, and in particular relates to a quartz wafer polishing process. Background technique [0002] Quartz crystal is an important electronic material; when a quartz wafer cut in a certain direction is subjected to mechanical stress, it will generate an electric field or charge proportional to the stress. This phenomenon is called the positive piezoelectric effect. Conversely, when the quartz wafer is subjected to an electric field, it will produce a strain proportional to the electric field. This phenomenon is called the inverse piezoelectric effect. The positive and negative effects are collectively called the piezoelectric effect. Quartz crystal not only has piezoelectric effect, but also has excellent mechanical properties, electrical properties and temperature properties. The resonators, oscillators and filters designed and manufactured with it have outstanding advantages in frequency stabi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00
CPCB24B1/00
Inventor 夏良军
Owner 菲特晶(南京)电子有限公司