Quartz wafer polishing technology
A quartz wafer and process technology, applied in the field of quartz wafer grinding technology, can solve problems to be further improved, etc., and achieve the effects of precise grinding, avoiding retention, and reducing residues
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Embodiment 1
[0024] S1, the first polishing and grinding: the grinding pressure is 5psi, the grinding speed is 100rpm, and the quartz wafer is polished and polished for the first time;
[0025] S2, the first cleaning: when the polishing and grinding intensity of the monitoring system is 75% of the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 65 seconds, and the cleaning flow rate is 600ml / min. The pH value of the cleaning solution is 2;
[0026] S3, the second polishing and grinding: the grinding pressure is 3psi, the grinding speed is 80rpm, and the quartz wafer is polished and polished for the second time;
[0027] S4, the second cleaning: When the polishing intensity of the monitoring system reaches the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the second time, wherein the cleaning time is 90 seconds, the cleaning...
Embodiment 2
[0031] S1. The first polishing and grinding: the polishing pressure is 5.5 psi, the grinding speed is 110 rpm, and the quartz wafer is polished and polished for the first time.
[0032] S2, the first cleaning: when the polishing and grinding intensity of the monitoring system is 75% of the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 68 seconds, and the cleaning flow rate is 700ml / min. The pH value of the cleaning solution is 2.5.
[0033] S3. The second polishing and grinding: the polishing pressure is 3.5 psi, the grinding speed is 85 rpm, and the quartz wafer is polished and polished for the second time.
[0034] S4, the second cleaning: when the polishing intensity of the monitoring system reaches the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the second time, wherein the cleaning time is 95 seconds, ...
Embodiment 3
[0038] S1, the first polishing and grinding: the grinding pressure is 6psi, the grinding speed is 120rpm, and the quartz wafer is polished and polished for the first time;
[0039] S2, the first cleaning: when the polishing intensity of the monitoring system is 75% of the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the first time, wherein the cleaning time is 70 seconds, and the cleaning flow rate is 800ml / min. The pH value of the cleaning solution is 3;
[0040] S3, the second polishing and grinding: the grinding pressure is 4psi, the grinding speed is 90rpm, and the quartz wafer is polished and polished for the second time;
[0041] S4, the second cleaning: when the polishing intensity of the monitoring system reaches the highest intensity, the polishing and grinding is stopped, and the surface of the quartz wafer is cleaned for the second time, wherein the cleaning time is 105 seconds, the cleaning flow rate i...
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