Semiconductor structure measurement and boundary feature extraction method and device

Abstract

The invention discloses a semiconductor structure measurement and boundary feature extraction method and device. The boundary feature extraction method comprises the steps: obtaining a profile image,output by a transmission electron microscope, of a semiconductor structure, wherein the profile image comprises a cross-section graph of at least one hole, the plane where the cross-section graph is located being perpendicular to the axial direction of the hole; screening out a first preset pattern by using the energy filtering transmission electron microscopy technology; and identifying the boundary of the first preset pattern, wherein the first preset pattern is formed by polysilicon in the hole. According to the boundary feature extraction method, by utilizing the special characteristic ofinteraction between the polysilicon and electrons, the contrast of the first preset pattern is enhanced, and the purpose of clearly identifying the boundary of the first preset pattern is achieved.

Description

technical field [0001] The present invention relates to semiconductor technology, and more specifically, to a semiconductor structure measurement and boundary feature extraction method and device thereof. Background technique [0002] With the miniaturization of semiconductor devices, the critical dimensions of semiconductor devices have been reduced to the nanometer level, which means that the critical dimensions will determine the performance of semiconductor devices. Therefore, it is necessary to accurately measure the critical dimensions and grasp the critical dimensions at the nanometer level The degree of change has become an essential link. [0003] In the prior art, measurement tools can be used to measure the general simple shape of semiconductor devices or the single and large critical dimensions of semiconductor devices, but for complex structures with small critical dimensions (such as 3D NAND) Said, the measurement tool in the prior art can not meet the needs, ...

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Problems solved by technology

[0003] In the prior art, measurement tools can be used to measure the general simple shape of semiconductor devices or the single and large critical dimensions of semiconductor devices, but for complex structures with small critical dimensions (such as 3D NAND) Said, the measurement tool in the prior art can not meet the needs, the main reasons are as follows:

[0004] 1. For example, when using an electron microscope to observe the channel hole in a 3D memory device, since the photo grayscale of the polysilicon channel layer and the tunneling layer filled in the channel hole are almost the same, the interface between the two cannot be distinguished, so Pr

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