13 results about "Microtechnology" patented technology

The invention provides a glass nanopore probe based on an aptamer and application of the glass nanopore probe in dopamine detection, and belongs to the technical field of electrochemical sensing and scanning probe microscopy. The sensor comprises: a glass nanopore probe, the inner wall of which is modified with a gold layer; a cDNA (complementary deoxyribonucleic acid) single chain is fixed on the gold layer through a gold-sulfur bond; a part of the sequence of the dopamine aptamer is hybridized and combined with the cDNA single chain; wherein the combination of the dopamine and the dopamine aptamer causes the change of an ion current rectification signal of the glass nanopore probe, so that the detection of the dopamine is realized based on the change of the ion current rectification signal of the glass nanopore probe. The invention provides a valuable scheme for developing an aptamer nanopore scanning electrochemical sensor for single cell analysis and researching neurotransmitter-related diseases.

The application provides a touch screen function sheet silver paste laser bevel processing device, belonging to the touch screen processing technical field. The quality detection assembly, wherein the confocal microscopic technique, provides the three-dimensional surface imaging ability of nanometer level resolution, can monitor the processing of the silver paste edge bevel in real time, the three-dimensional adjustable support supports the probe to adjust in the X / Y / Z axis direction, cooperates with the nanometer level displacement detection ability of the miniature confocal microscope, can calibrate the bevel angle of the laser processing head and the function sheet in real time, thereby ensuring the accuracy of the bevel cutting, avoiding the short circuit of the silver paste line caused by the angle error, the high light reflection smoke dust is easy to produce during the laser processing, the air curtain isolation device forms a barrier through the annular airflow, can blow away the particles generated by the molten silver paste in real time, ensures the definition of the microscopic image, and the ceramic sleeve keeps the structure stable under the high temperature environment generated by the laser processing, prevents the deviation or failure of the miniature confocal microscope lens caused by thermal deformation.

To integrate a large number of propulsion force generating devices accompanied by an air current as reaction in a propulsion force direction while avoiding the air current.SOLUTION: In one embodiment of the present invention, a centrifugal force is applied to the air flow in a direction perpendicular to the direction of the propulsive force, and the path of the air flow is controlled so that the air flow does not hit other components of the stack. As a propulsive force generating device, there is a technique for obtaining a propulsive force by breaking the balance of atmospheric pressure in the device by diffraction of gas molecules derived from the wave nature of matter waves based on the quantum theory. Since this technology is in the field of fine technology including nano-technology, the device size is small, and it is necessary to integrate a large number of devices in order to obtain a practical driving force. A practical propulsion force can be obtained by the accumulation method of the present invention.SELECTED DRAWING: Figure 18

The invention belongs to the technical field of electron microscopy, and discloses a microscopic in-situ measurement method for linear thermal expansion coefficient of silicon carbide, which comprises the following steps: (1) dispersing palladium and alumina nanoparticles on an in-situ heating chip, heating and observing to obtain a polycrystalline diffraction ring photo; (2) performing circle center identification on the obtained polycrystalline diffraction ring; (3) carrying out inverse space diffraction ring radius identification based on experimental data; and (4) obtaining a change diagram of the linear thermal expansion coefficient along with the temperature according to the obtained data. The linear thermal expansion coefficients of different coating materials and silicon carbide can be compared at the same temperature at the same time by using the position relation between the silicon carbide heating body on the heating chip and the load sample, and the linear thermal expansion coefficient can be accurately obtained by introducing standard palladium particles to calibrate picture errors caused by diffraction. And a brand-new reliable test scheme is developed for screening coating materials in the future.

The invention discloses an intelligent in-situ modification method and device for a tip-enhanced Raman spectrum probe, and belongs to the cross technical field of micro-nano optics and scanning probe microscopy, and the method comprises the following steps: moving the probe to the center of a flat area through scanning imaging; controlling the probe to enter mechanical oscillation and repeatedly contact with the substrate, and maintaining the oscillation in a critical state by using a machine learning classifier so as to sensitively capture oscillation stop caused by tunneling apparent potential barrier height reduction caused by optical activity; after oscillation is stopped, the optical activity of the probe is detected for the second time, and modification is completed if the probe is qualified; if the activity does not exist, re-searching the flat area and entering the next cycle; and if the probe still has no optical activity after multiple cycles, implementing controlled pricking or applying a bias pulse in the flat area to refresh the state of the tip of the probe, and then entering a new round of modification cycle until the optical activity probe is obtained. According to the method, the modification efficiency can be remarkably improved, and intelligent customization of the resonance frequency of the plasmon of the probe is realized.

The application provides an electrochemical in-situ cell and system suitable for spectral imaging microscopy testing, a working electrode is arranged in a first recess, an upper cover is further provided with a second through hole in a first direction, and the upper cover is further provided with an inclined groove and a first connecting hole along a first plane. One end of a conductive tab is in contact with the working electrode, and the other end of the conductive tab extends to the outside of the upper cover. One end of a counter electrode is located in the second through hole, and the other end of the counter electrode extends to the outside of the upper cover. The second through hole is configured to accommodate a solution, and the conductive tab is configured to apply an external potential to the working electrode. The part of the working electrode accommodated in the first through hole is a transparent material, external light passes through the working electrode to irradiate the solution in the second through hole, and an external microscope device is configured to obtain spectral imaging information during the reaction process of the solution. The electrochemical in-situ cell of the application can be compatible with external light characterization and electrochemical testing, expand the function of spectral microscopy technology, and provide microscopic chemical information for electrochemical process testing.

The invention discloses a unijunction Josephson probe and a preparation method thereof, and belongs to the technical field of superconducting electronics and scanning probe microscopy, the probe comprises a probe body and a niobium film layer, the probe body is provided with two grooves, the niobium film layer comprises a first electrode and a second electrode which are symmetrically arranged, and the first electrode and the second electrode are arranged in parallel. The first electrode and the second electrode are connected at the top end of the needle body through the middle connecting area, and the first electrode, the middle connecting area and the second electrode form a single Josephson junction. The method comprises the following steps: step 1, pretreating a substrate; step 2, nano needle tip drawing; step 3, performing magnetron sputtering for the first time; step 4, turning over in situ; and 5, carrying out magnetron sputtering for the second time. According to the single-junction structure, a superconducting ring and double-junction symmetric matching are not needed, so that the yield and the preparation reliability of the device are remarkably improved; the preparation of a single Josephson junction at the top end of the nano needle tip is realized for the first time, a simplest nano bridge type weak connection structure is adopted, and a junction region is positioned at the tip end of the needle tip, so that the spatial resolution of near-field detection is improved.

The application provides a scanning nonlinear dielectric microscope regulation method and system. It belongs to the technical field of nanometer scale dielectric characterization, scanning probe microscopy technology and precise temperature control system. The method comprises the following steps: deploying an integrated temperature control module on a sample table of a scanning nonlinear dielectric microscope; based on the deployment, constructing an SNDM basic platform with heat and machine cooperation ability, generating SNDM hardware architecture data integrated with temperature control; according to the SNDM hardware architecture data integrated with temperature control, implementing a partition wiring strategy of a high-frequency signal link and a temperature control power supply; after wiring, performing electromagnetic compatibility testing to generate high-frequency compatibility verification data; through the deep integration of the integrated temperature adjustment module and the scanning nonlinear dielectric microscope (SNDM), the dielectric imaging precision of ferroelectric materials in a wide temperature range is significantly improved, the temperature fluctuation is controlled within ±0.1℃, and the accurate capture of dielectric response under high spatial resolution is ensured.

This invention relates to the field of liquid chamber (LC) electron microscopy, specifically to an in-situ LC electron microscopy characterization and screening method for abrasive particles in integrated circuit CMP polishing slurries. Addressing the problems of high viscosity, high hardness of abrasive particles and clusters, complex systems, and easy breakage of LC windows in CMP polishing slurries, this invention improves the stability of LC packaging and observation through pretreatment, liquid injection volume control, vacuum stabilization, and window thickness optimization. This method performs in-situ characterization of CMP polishing slurry abrasive particles in a real liquid phase environment, obtaining information on abrasive particle size, morphology, agglomeration and dispersion state, dynamic behavior, and composition. It also establishes the correlation between abrasive particle liquid phase structure parameters and CMP polishing performance, enabling performance prediction and screening of polishing slurries. Characterization results of two CMP polishing slurries from different sources but with identical nominal parameters show significant differences in the true morphology, size distribution, and agglomeration state of the abrasive particles in the liquid phase. This demonstrates that the method of this invention can reveal the true liquid phase state that traditional dry-state characterization and average statistical characterization cannot reflect, providing a basis for polishing slurry performance evaluation, defect risk analysis, and screening.

Method for manufacturing a micro-technical component (100) with a substrate (3) as a semiconductor substrate, which has a front (2) and a back (1) and with at least one electrical via (150, 150') in the substrate (3), the method comprising the following steps ... - Producing a protective layer (4) over a component structure (5) that is produced on and / or in a front face (2) of the substrate (3); - Forming at least one deep or long, hollow cylindrical contact hole (14,14') to form the at least one via (150), wherein the aspect ratio of the at least one via is greater than or equal to eight and extends from a surface of the back side (1) of the substrate to a contact surface (5a) of the component structure (5); - Forming a metal-containing and therefore conductive lining (8,9,10) in the or each deep or long contact hole (14,14'), so that a hollow, electrically conductive structure (110) is formed in the or each contact hole (14,14'); - Application of a passivation layer (11) over the back of the substrate (3), which spans the hollow conductive structure to form at least one electrical via (150,150'); wherein the passivation layer (11) is provided with openings or a local structuring takes place, adapted or suitable for subsequent coating with further metal layers (12) and for the placement of solder balls (13) over the back (1) of the substrate (3); and with the fabrication of a wiring structure (10a, 10b) on the surface of the back side for connecting the via (150) to a solder ball structure (13), wherein the connection is a conductor track (10a) exhibits; wherein the spanning of the hollow conductive structure by the passivation layer (11) is carried out and the process parameters during manufacturing are set in such a way that the vias (150) are covered without or without significant material input into the contact holes (14), thereby spanning them, in particular the hollow conductive structures (110).

The application provides a scanning nonlinear dielectric microscope regulation method and system. It belongs to the technical field of nanometer scale dielectric characterization, scanning probe microscopy technology and precise temperature control system. The method comprises the following steps: deploying an integrated temperature control module on a sample table of a scanning nonlinear dielectric microscope; based on the deployment, constructing an SNDM basic platform with heat and machine cooperation ability, generating SNDM hardware architecture data integrated with temperature control; according to the SNDM hardware architecture data integrated with temperature control, implementing a partition wiring strategy of a high-frequency signal link and a temperature control power supply; after wiring, performing electromagnetic compatibility testing to generate high-frequency compatibility verification data; through the deep integration of the integrated temperature adjustment module and the scanning nonlinear dielectric microscope (SNDM), the dielectric imaging precision of ferroelectric materials in a wide temperature range is significantly improved, the temperature fluctuation is controlled within ±0.1℃, and the accurate capture of dielectric response under high spatial resolution is ensured.

The invention provides a positioning and density-adjustable gallium nitride quantum dot dispersion method. The method comprises the following steps: obtaining a gallium nitride nanowire substrate on which gallium nitride quantum dots grow; performing ultrasonic treatment in a dispersion solvent, and regulating and controlling the concentration of the quantum dot dispersion liquid by controlling the ultrasonic duration; dispensing the dispersion liquid onto a target substrate with a photoetching patterning mark, and drying to enable the quantum dots to be positioned in a mark area; and scanning and verifying quantum dot distribution by adopting a fluorescence microscopy technology to obtain a positioned and density-controllable gallium nitride quantum dot sample. According to the method, accurate positioning and flexible density regulation and control of the gallium nitride quantum dots on the substrate can be simultaneously realized, the technical problems of random distribution and uncontrollable density of the quantum dots in a traditional method are effectively solved, and the integration level and the performance consistency of the quantum dot device are remarkably improved.

A cryogenic temperature sensor (01) for temperature measurement in the cryogenic temperature range, comprising a microtechnologically fabricated primary measuring resistor (03) and a secondary semiconductor measuring resistor (04) arranged on a common sensor carrier (02) and whose temperature-dependent resistance values ​​can be determined by a measuring circuit, wherein the sensor carrier (02) is formed by a dopable silicon chip, on one side of which the doped semiconductor measuring resistor (04) and on the other side of which the primary measuring resistor (03) are formed, and wherein the semiconductor measuring resistor (04) has an extremum in its resistance-temperature characteristic curve in the cryogenic operating range of the temperature sensor that can be set in the manufacturing process and which can be used as a sensor-specific fixed point for in-situ calibration of the primary measuring resistor (03).