The invention provides a FinFET structure and a manufacture method thereof. The FinFET structure comprises a substrate, a first fin, a second fin, a grid lamination layer, a source region, a drain region, sidewalls and a substrate channel region, wherein the first and second fins parallel with each other are placed on the substrate; the grid lamination layer covers the substrate and part of the sidewalls of the first and second fins; the source region is placed in the area, not covered by the grid lamination layer, of the first fin; the drain region, is placed in the area, not covered by the grid lamination layer, of the second fin; the sidewalls are placed at the two sides of the first fin and the two sides of the second fin respectively and on the grid lamination layer to isolate the source region, the drain region and the grid lamination layer from one another; and the substrate channel region is placed in the substrate in an area close to the upper surface. According to the invention, the new device structure is provided on the basis of a present FinFET technology, and the grid length of the device is not limited by the footprint size, and the problem caused by the short channel effects is effectively solved.