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Preparation method and application of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer

A quantum dot light-emitting and quantum dot technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of low current density of quantum dot light-emitting diode devices, affecting the brightness of quantum dot light-emitting diode devices, etc. High-efficiency lighting source and display device, low production cost, and increased charge transfer effect

Active Publication Date: 2021-11-19
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the light-emitting layer of traditional quantum dot light-emitting diodes (QLED) is quantum dots with long carbon chain ligands such as oleic acid and oleylamine. The existence of these long carbon chain ligands will prevent the contact between quantum dots and affect the interaction between quantum dots. Charge transport leads to low current density of quantum dot light-emitting diode devices, which affects the brightness of quantum dot light-emitting diode devices

Method used

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  • Preparation method and application of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer

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Embodiment 1

[0028] A preparation method of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer, the method comprises the following steps:

[0029] Step 1: Preparation of quantum dot solution: quantum dots are dissolved in dichloroethane to prepare a quantum dot solution with a concentration of 20 mg / m; wherein the quantum dots are colloidal nano-semiconductors composed of III-VI or II-V group elements Material.

[0030] Step 2: Quantum dot ligand stripping: take 10ml of the quantum dot solution in step 1, add 1ml of electrophilic reagent, the electrophilic reagent can be selected from benzoyl chloride, and sonicate for 10min;

[0031] Step 3: Redispersion of quantum dots: Add 0.5 ml of N,N-dimethylformamide to the solution in step 2, purify twice, and prepare quantum dot N,N-dimethylformamide with a concentration of 20 mg / ml solution;

[0032] Step 4: Preparation of the ligand-stripped quantum dot light-emitting layer: spin-coat the quantum dot N,N-dimethylfor...

Embodiment 2

[0041] A preparation method of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer, the method comprises the following steps:

[0042] Step 1: Quantum dot solution preparation: Quantum dots are dissolved in n-hexane to prepare a quantum dot solution with a concentration of 30 mg / ml; wherein the quantum dots are colloidal nano-semiconductor materials composed of III-VI or II-V group elements.

[0043] Step 2: Quantum dot ligand stripping: take 10ml of the quantum dot solution in step 1, add 1ml of electrophilic reagent, the electrophilic reagent can be selected from benzoyl chloride, and sonicate for 10min;

[0044] Step 3: Redispersion of quantum dots: Add 0.5 ml of N,N-dimethylformamide to the solution in step 2, purify twice, and prepare quantum dot N,N-dimethylformamide with a concentration of 30 mg / ml solution;

[0045] Step 4: Preparation of the ligand-stripped quantum dot light-emitting layer: spin-coat the quantum dot N,N-dimethylformamide so...

Embodiment 3

[0054] A preparation method of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer, the method comprises the following steps:

[0055] Step 1: Preparation of quantum dot solution: quantum dots are dissolved in toluene to prepare a quantum dot solution with a concentration of 40 mg / ml; wherein the quantum dots are colloidal nano-semiconductor materials composed of III-VI or II-V group elements.

[0056] Step 2: Quantum dot ligand stripping: take 10ml of the quantum dot solution in step 1, add 1ml of electrophilic reagent, the electrophilic reagent can be selected from benzoyl chloride, and sonicate for 10min;

[0057] Step 3: Redispersion of quantum dots: Add 0.5 ml of N,N-dimethylformamide to the solution in step 2, purify twice, and prepare quantum dot N,N-dimethylformamide with a concentration of 40 mg / ml solution;

[0058] Step 4: Preparation of the ligand-stripped quantum dot light-emitting layer: spin-coat the quantum dot N,N-dimethylformamide ...

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Abstract

The invention discloses a preparation method and application of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer. Traditional oleic acid and oleylamine ligand quantum dots are dispersed in a non-polar solvent n-hexane, toluene or dichloroethane alkane solvent, then add the electrophile benzoyl chloride, add N,N-dimethylformamide (DMF) after sonication, shake vigorously on a vortex shaker and purify to obtain the ligand stripped and dispersed in N,N- Dimethylformamide (DMF) quantum dots and used to prepare high brightness quantum dot light-emitting diodes. The method for peeling off the ligands of the quantum dots can increase the current density of the quantum dot light-emitting diode by 3 to 5 times, improve the brightness of the quantum dot light-emitting diode by more than 40%, and has the advantages of good product dispersibility, easy industrial production, low production cost and strong practicability. , which can create more efficient lighting sources and display devices for people's lives. The invention realizes the quantum dot light-emitting device with higher brightness and meets people's living needs.

Description

technical field [0001] The invention relates to the technical field of preparation methods of light-emitting diodes, in particular to a preparation method and application of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer. Background technique [0002] Lighting is a major demand of human society, and its energy consumption is an important part of today's social energy consumption. The current light-emitting diodes (LEDs) have become a new generation of lighting sources due to their advantages of high brightness and low energy consumption. However, organic light-emitting diodes (OLEDs) that do not require a backlight are more popular in the market today, but OLEDs have short lifespans, low yield rates, and poor practical results. With the development of lighting and display technology, quantum dot light-emitting diode (QLED) technology, which can freely adjust the wavelength, has high color purity and simple process, has also attracted more and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56
CPCH10K71/12H10K71/15
Inventor 段军红邹时兵冯璐欣刘艳彬樊昊
Owner NANCHANG HANGKONG UNIVERSITY
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