Three-dimensional memory and forming method thereof

A memory and three-dimensional technology, applied in the semiconductor field, can solve the problems affecting the electrical connection of the word line contact hole etching process, affecting the performance of the memory, and the residue of conductive materials, so as to improve the collapse phenomenon, prevent metal residue, and strengthen the support effect.
CN110707091AInactive Publication Date: 2020-01-17YANGTZE MEMORY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANGTZE MEMORY TECH CO LTD
Publication Date
2020-01-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a three-dimensional memory and a forming method thereof. The three-dimensional memory comprises a substrate and a stacked structure located on the substrate, the stacked structure is provided with a virtual region, and the virtual region is provided with a plurality of vertical structures penetrating through the stacked structure. Each vertical structure comprises an isolation layer and a supporting body located in the isolation layer, and the supporting body is made of the undoped polycrystalline silicon. The three-dimensional memory provided by the invention can relieve the collapse problem of a stepped region.
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Description

Technical field

[0001] The present invention relates to the field of semiconductors, and in particular to a three-dimensional memory with a vertical structure of virtual areas and a method for forming the same. Background technique

[0002] With the continuous development of 3D NAND technology, more and more layers of 3D memory can be stacked vertically, from 24 layers, 32 layers, 64 layers to more than 100 layers of high-level stacked structures, which can greatly increase the storage density and reduce The price of a unit storage unit.

[0003] In the formation process of a high-level (for example, 128-layer) three-dimensional memory, a non-functional virtual area is defined in the Stair Step (SS), and some virtual holes or virtual grooves are formed in the virtual area. Typically, it is a dummy channel hole (DCH). And an Atomic Layer Deposition (ALD) method is used to deposit oxide in these holes or trenches to form a vertical structure. In some processes, this vertical struc...

Claims

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