4results about How to "Avoid Metal Residue" patented technology

The invention relates to a synthesis method of 7H-pyrrolo [2, 3-d] pyrimidine-4-amine, and belongs to the technical field of synthesis of drug intermediates. In order to solve the problems of easy generation of metal residues and low yield in the prior art, the invention provides a synthetic method of 7H-pyrrolo [2, 3-d] pyrimidine-4-amine, which comprises the following steps: in the presence of alkali, reacting aziridine with malononitrile to obtain a compound shown as a formula III; under the action of organic alkali and trichloroisocyanuric acid, the compound shown in the formula III is subjected to oxidative dehydrogenation reaction to be converted into 2-amino-3-cyano-1H-pyrrole; the 2-amino-3-cyano-1H-pyrrole and formamidine acetate are subjected to a reaction, and the 7H-pyrrolo [2, 3-d] pyrimidine-4-amine is obtained. According to the method, the problem of metal residues caused by the adoption of a noble metal catalyst can be effectively avoided, the product yield is better guaranteed, the high-purity quality effect is achieved, and the purity of an intermediate product in each step can reach 99% or above.

The present invention relates to 1 ,N 3 Preparation of bis(2,3-dihydroxypropyl)-5-((2,3-dihydroxypropyl)amino)isophthalamide and its analogs (Formula III), specifically 5-amino-N 1 ,N 3 -Bis(2,3-dihydroxypropyl)-2,4,6-triiodoisophthalamide or 5-amino-N 1 ,N 3 ‑Bis(2,3‑dihydroxypropyl)isophthalamide and hydroxyl-protected glyceraldehyde, acetone acetal glyceraldehyde or glyceraldehyde undergo reductive amination reaction under the action of solvent, reducing agent and additive.

The invention relates to the technical field of semiconductors, and provides a semiconductor structure and a preparation method thereof.The semiconductor structure comprises a plurality of semiconductor block structures arranged in the first direction and signal line leading-out structures located on at least one side end area of the semiconductor block structures; the signal line leading-out structure comprises a plurality of signal lines which extend in the second direction and are arranged at intervals in the third direction. The signal line comprises a main body extension part and a leading-out end part positioned at at least one end of the main body extension part; in the signal line leading-out structure, the orthographic projections of the leading-out end parts of any two signal lines on the substrate are not overlapped, and the orthographic projections of the main body extension parts of any two signal lines on the substrate are overlapped; and in the third direction and in the direction from the side close to the substrate to the side far away from the substrate, the lengths of the signal lines are sequentially reduced or sequentially increased. The semiconductor structure disclosed by the invention is relatively short in process flow and relatively low in manufacturing cost, and is convenient for leading out each signal line.

This invention discloses an electrochemical method for synthesizing aromatic cycloallylic compounds, belonging to the field of chemical synthesis technology. In this method, aryl diazonium salts and allyl sulfones are electrolyzed in an electrochemical reactor in the presence of a solvent and electrolyte by applying an electric current to obtain aromatic cycloallylic products. This invention uses electrochemical-driven processes to replace traditional transition metal catalysis, avoiding the problem of metal residue. It has advantages such as being environmentally friendly, low-cost, and having mild operating conditions, and has good prospects for industrial application.