52results about How to "Avoid Metal Residue" patented technology

The invention discloses a method for directly oxidizing a benzyl-position C-H bond into ketone, wherein aryl ethyl compounds are catalyzed and oxidized by nitrite ester; a synergistic catalytic system of free radical initiator and nitrite ester is adopted, and a catalytic system of non-metallic catalyst and oxygen is adopted, the oxidization of the C-H bond of a free radical-activated aryl side chain is simple in operation; after completing the reaction, petroleum ether / ethyl acetate at a volume ratio of (50-1):1 is used as an eluent; column chromatography separation is performed to obtain a target product. The catalytic system in the invention uses oxygen as an oxygen source and has high atomic economy; the invention is a non-metallic catalytic system and provides a novel method for avoid metal residues in synthetic drugs; for diethyl aromatic hydrocarbon, the method provided by the invention can be adopted to selectively oxidize diethyl aromatic hydrocarbon into monoketone and diketone; the method of the invention can be adopted to efficiently synthesize tranquillizer lenperone, so that a novel method for synthesizing lenperone is provided.

The invention provides an Idelalisib synthesis method. The method comprises steps as follows: a compound 3 is processed with hydrogen in the presence of a hydrogenation catalyst and a solvent, nitro is enabled to be reduced, and an amino compound II is obtained; the compound II and N-Boc protected L-2-aminobutyric acid are subjected to condensation in the presence of alkali and a carboxylic acid activator or in the presence of alkali and a condensation agent, and an intermediate I is obtained; the intermediate I is subjected to a ring closing reaction in an appropriate solvent under the action of a hexamethyldisilazane / lewis acid catalytic system, and a compound 7 is obtained; the compound 7 reacts with 6-chloro-9-(2-tetrahydropyran) purine in an appropriate solvent in the presence of an acid-binding agent, and a compound III is obtained; the compound III is subjected to protecting group removal with an appropriate reagent, and Idelalisib is obtained. A reaction path is shown in the specification. The preparation method has the advantages that the reaction conditions of each step are mild, the post-processing is simple and easy to implement and the total yield is high, and the preparation method is environment-friendly and is very suitable for industrial production.

The invention belongs to the technical field of synthetic chemistry and particularly relates to a method for synthesizing 1-iodo-alkyne in a high-selectivity manner. The method is mild in reaction condition, controllable in reaction product, single in product, easy in product purification, high in chemical selectivity, simple in synthesizing step, safe, reliable, green, environmentally friendly, applicable to various terminal alkyne reaction substrates and suitable for industrial production, and the synthesizing yield of the method reaches up to 99%.

The invention discloses a display substrate, a preparation method thereof and a display device. The display substrate comprises multiple pixel island regions, empty regions and connecting bridge regions. The preparation method comprises the steps that a hard substrate is provided; first grooves and second grooves are formed in one side of the substrate, the first grooves correspond to the pixel island regions, and the second grooves correspond to the connecting bridge regions; the display substrate is prepared on the side, where the first grooves and the second grooves are formed, of the substrate, the pixel island regions are located in the first groove region, the connecting bridge regions are located in the second groove region, and the empty regions are located in a region except the first groove region and the second groove region; and the substrate and the display substrate are separated, so that the display substrate is obtained. In the process of preparing the display substrateby adopting the method, the segment gap between each empty region and other regions is greatly reduced, residues of an empty region film layer in a later process are avoided, badness caused by poor local disconnection is avoided, and the yield of the display substrate is increased.

The invention discloses an enhancer for a touch screen edge enhancing process. The enhancer is prepared by sequentially mixing pure water, 70% sulfuric acid, 70% ammonium fluoride, 49% hydrofluoric acid, 99% acetic acid and 37% hydrochloric acid at the mass ratio of (0.5-0.6) to (1-1.1) to (0.025-0.035) to (0.1-0.2) to (0.02-0.03) to (0.001-0.002), wherein the sulfuric acid can smoothen small scars on the surface of glass and is not easy to volatilize, so that the utilization rate of the enhancer is improved; the hydrofluoric acid mainly functions as etching and is capable of eliminating micro cracks in the glass; ammonium fluoride can take an effect of etching the glass after being mixed with sulfuric acid, and can form a buffer solution together with hydrofluoric acid; acetic acid is conducive to the improvement of the solubility of calcium sulfate and calcium fluoride generated from an reaction between the enhancer and the glass so as to avoid the generation of a precipitate; hydrochloric acid can be used for effectively removing metal impurities included in the glass; and the mixed acid is utilized as the enhancer, so that the problem of metal residue in etching when hydrofluoric acid is merely adopted can be avoided, and the strength of a touch screen is enhanced.

The invention relates to a three-dimensional memory and a forming method thereof. The three-dimensional memory comprises a substrate and a stacked structure located on the substrate, the stacked structure is provided with a virtual region, and the virtual region is provided with a plurality of vertical structures penetrating through the stacked structure. Each vertical structure comprises an isolation layer and a supporting body located in the isolation layer, and the supporting body is made of the undoped polycrystalline silicon. The three-dimensional memory provided by the invention can relieve the collapse problem of a stepped region.

The invention discloses a 2-alkoxy chromone oxime derivative and a preparation method and application thereof. The preparation method includes: dissolving a 3-formyl chromone derivative, sodium nitrite, an alcohol derivative and an oxidizing agent into a solvent, and performing reaction under room temperature to obtain the 2-alcoxyl chromone oxime derivative. The preparation method has the advantages that the 3-formyl chromone derivative used as the initiator is easy to obtain, low in cost and many in variety; the sodium nitrite used as the oximation reagent is low in cost; metal catalysts are not needed, metal residues can be avoided, and the method is suitable for preparing medicine and biological preparations; the reaction of the method is performed in the air, and the method is mild in reaction condition, short in reaction time, high in target product yield, simple in reaction operation and post-treatment, low in environment pollution and suitable for industrial production.

The invention provides an array substrate and a manufacturing method thereof. A patterned metal component of the array substrate comprises a patterned first metal layer, a patterned second metal layerand a patterned copper layer which are sequentially arranged on the substrate in a stacked mode, wherein the speed of etching the second metal layer by the etching solution is smaller than that of etching the first metal layer by the etching solution. The structures of the second metal layer and the first metal layer are patterned, the problem of metal residue during etching of the second metal layer can be avoided, the problem of copper hollowing caused by corrosion of the patterned second metal layer can be avoided, the adhesive force between the patterned first metal layer and the substrate is greater than that between the patterned copper layer and the substrate, the adhesive force of the patterned metal component on the substrate is improved, and copper diffusion can be prevented.

The invention discloses a preparation method of a carbon dioxide-based polyester-polycarbonate copolymer. The method comprises the following steps: adding reaction monomers phthalic anhydride, epoxypropane, a branching agent and a catalyst into a high-pressure reaction kettle, then introducing high-purity carbon dioxide gas, and heating to carry out ring-opening copolymerization reaction; and after the reaction is finished, performing precipitating, drying and crushing to obtain the purified branched copolymer. The copolymer is formed by copolymerization of propylene oxide, carbon dioxide, phthalic anhydride and a small amount of branching agent, and PPC-P is modified. The branching agent can open a ring and connect a polymer chain, so that the molecular weight and the distribution index of the copolymer are improved; the melt index is obviously reduced compared with that of the copolymer without adding the branching agent, so that the mechanical strength of the copolymer is improved; and the copolymer has good light transmission.

The invention belongs to the technical field of synthetic chemistry and particularly relates to a method for synthesizing a 1, 2-diiodo-olefin compound in a high-selectivity manner. The method is mild in reaction condition, controllable in reaction product, single in product, easy in product purification, high in chemical selectivity, simple in synthesizing step, safe, reliable, green, environmentally friendly, applicable to various terminal alkyne reaction substrates and suitable for industrial production, and the synthesizing yield of the method reaches up to 99%.

The invention discloses a 1,4; 3, 6-diglycidyl hexanehexol modified PET polyester and a semi-continuous preparation method thereof, and monomers of the modified PET polyester comprise (a) terephthalic acid, (b) ethylene glycol, and (c) 1, 4; 3, 6-dihexanediol or mixtures thereof, and (d) aliphatic and / or alicyclic dihydric alcohol. The method comprises the following steps: preparing a certain amount of terephthalic acid glycol ester in a first esterification kettle, then continuously adding mixed terephthalic acid and glycol slurry into the first esterification kettle at a certain flow rate for reaction, and intermittently discharging reaction products into a second esterification kettle, and adding the modified monomer / ester exchange catalyst into the second esterification kettle for esterification / ester exchange reaction to obtain a prepolymer, discharging all the prepolymer into a polycondensation kettle, adding a polycondensation catalyst, and carrying out melt polycondensation to obtain a final polymer. The method provided by the invention overcomes the problems of low reaction activity, low conversion rate and high production cost of bio-based monomers, avoids the problem of metal residues, and is beneficial to realization of industrial production.

The invention discloses a metal-insulator-metal (MIM) capacitor. The grain size of metal of a first conductive layer and a second conductive layer of the capacitor is 1.2 to 2.5mu m, so that the problem of metal residues generated in the process of etching the MIM capacitor is solved. Meanwhile, the invention discloses a preparation method for the MIM capacitor. The idle time of a sputtering machine table is detected before each lot of chips are subjected to metal sputtering by the method, so that the problem of the metal residues generated in the etching process due to too small grains of the sputtered metal caused by low process stability of the sputtering machine table is solved.

The invention discloses chiral aromatic amine compounds and a preparation method thereof. The chiral aromatic amine compounds are characterized in that under the alkaline condition, compounds I reactwith compounds II to obtain corresponding products, namely chiral aromatic amine compounds labeled by compounds with structural formulas III, IV and V or enantiomers, despinners, diastereoisomers or isotopes thereof: (the formula is shown in the description), wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16 and R17 are separately selected from any group, and X is chlorine or bromine. The chiral aromatic amine compounds with high optical purity (an ee value is greater than 99 percent) have wide application in the fields of bioactivity, materials, chiral ligands, chiral catalysts and the like, and can be further derived to prepare recemic or chiral aromatic amine ligands serving as catalyst for asymmetric catalytic reaction. The invention lays a foundation for developing novel catalysts for the asymmetric catalytic reaction and has economic practicality and industrial application prospect.

The invention provides an organic light emitting diode display and a manufacturing method thereof. An inorganic insulating layer covering a grid electrode is formed; an organic insulating layer is formed on the inorganic insulating layer to achieve a planarization effect; the problem of metal residue during etching of a subsequently formed metal layer due to an abrupt slope is avoided; a groove isformed in the position, corresponding to the grid electrode, of the organic insulating layer, a metal component used for forming a capacitor with the grid electrode is formed in the groove and arranged corresponding to the grid electrode, the distance between the grid electrode and the metal component is reduced, and the capacitance of the capacitor composed of the grid electrode and the metal component is large.

The invention discloses a preparation method of an elagolix intermediate. The preparation method comprises the following steps: in the presence of a catalyst and alkali, heating a compound II and a compound III to 50-100 DEG C in an organic solvent, and carrying out a reflux coupling reaction to obtain a compound I. According to the preparation method of the elagolix intermediate, 2-methyl-N1,N3-di-o-tolylphenyl-1,3-diamine is adopted as a coupling catalyst, so metal residues of a traditional coupling metal catalyst are effectively avoided, the quality of the intermediate is improved, reactionconditions are mild, operation is simple, the catalyst is stable and is not easy to inactivate, anaerobic harsh reaction conditions are not needed, and process preparation cost is greatly reduced.

The invention discloses a spinning cotton cleaner capable of adjusting the material quantity, and belongs to the technical field of spinning. The spinning cotton cleaner capable of adjusting the material quantity comprises a feeding bin, a material storage box and an operation case, wherein the outer wall of the feeding bin is fixedly connected with the outer wall of the material storage box; a telescopic column is arranged in the material storage box; one end of the telescopic column is fixedly connected with the inner wall of the material storage box; a squeezing plate is fixedly installed at the other end of the telescopic column; a discharging device is arranged at the bottom of the squeezing plate; the outer wall of the discharging device is fixedly connected with the inner wall of the material storage box; and a material conveying wheel is movably installed on the inner wall of the material storage box. The discharging amount and the discharging speed of cotton can be controlledthrough the rotating opening and closing degree of rotating blades; cotton feeding can be controlled according to the actual situation; the cotton feeding speed can be further controlled through the material conveying wheel, and the cotton is opened; and the squeezing plate squeezes the cotton to increase the discharging amount of the cotton in the material storage box, so that the cotton is prevented from remaining on the discharging device.

The invention provides a bottle recycling device, and belongs to the technical field of machinery. The bottle recycling device comprises a rack, wherein an accommodating groove is fixed to the rack; a limiting area used for accommodating a bottle body is formed at the bottom of the accommodating groove; a fixed frame is fixed to the rack; a first push rod motor is fixed to the fixed frame; a lifting frame is fixed to a push rod of the first push rod motor; a pressing and overturning mechanism used for pressing the bottom of a bottle into the accommodating area and enabling the inner edge of a metal block on the upper portion of the bottle to be overturned outwards is fixed to the lifting frame; the lifting frame is further provided with a pushing and pressing mechanism used for overturning the inner edge of the overturned metal ring to be attached to the outer wall of the bottle body, and an upper pressing mechanism used in cooperation with a pushing frame mechanism and arranged on the rack; and the pushing and pressing mechanism and the upper pressing mechanism are matched to clamp the inner edge of the metal ring and press the inner edge downwards, so that the whole metal ring falls off from the bottle.

The embodiment of the invention provides a touch display panel and touch display equipment. The touch display panel comprises a display substrate, a packaging layer, a touch electrode and a touch wire which are arranged in sequence. The touch wire arranged on the side, away from the display substrate, of the packaging layer comprises a first end connected with the corresponding touch electrode and a second end extending from the first end to the edge, away from the display area, of the organic packaging layer, and the orthographic projection of the second end on the organic packaging layer included in the packaging layer is completely covered with the organic packaging layer. Thus, it can be avoided that the second ends of the touch wires exceed the edge of the organic packaging layer, and in the patterning process of the touch wires, even if photoresist accumulation exists at the positions exceeding the edge of the organic packaging layer to cause uneven exposure, the touch wires do not exist at the positions exceeding the edge of the organic packaging layer, so that short circuit of the adjacent touch wires due to metal residues can be avoided, and touch failure of the touch display panel is avoided.

The invention belongs to the technical field of synthetic chemistry and particularly relates to a method for synthesizing 1-iodo-alkyne in a high-selectivity manner. The method is mild in reaction condition, controllable in reaction product, single in product, easy in product purification, high in chemical selectivity, simple in synthesizing step, safe, reliable, green, environmentally friendly, applicable to various terminal alkyne reaction substrates and suitable for industrial production, and the synthesizing yield of the method reaches up to 99%.

The invention discloses a method for manufacturing the zeroth layer interlayer film, comprising steps: step 1, forming a first grid structure on the surface of a semiconductor substrate; the area between each first grid structure is a spacer area; forming side wall and form a contact hole etch stop layer composed of a nitride film; Step 2, grow the zeroth interlayer film; Step 3, perform the first selective chemical mechanical polishing to grind and stop the zeroth interlayer film On the contact hole etching stop layer on the top surface of the sidewall; step 4, perform the second non-selective chemical mechanical polishing to simultaneously polish the oxide film and the nitride film and stop the contact hole etching on the top surface of the polysilicon gate on the etch stop layer; Step 5, performing a third selective etching to remove the remaining contact hole etch stop layer on the top surface of the polysilicon gate. The invention can eliminate the butterfly defect of the zeroth interlayer film and improve the product yield.

The invention belongs to the technical field of synthetic chemistry and particularly relates to a method for synthesizing a 1, 1, 2-triiodo-olefin compound in a high-selectivity manner. The method is mild in reaction condition, controllable in reaction product, single in product, easy in product purification, high in chemical selectivity, simple in synthesizing step, safe, reliable, green, environmentally friendly, applicable to various terminal alkyne reaction substrates and suitable for industrial production, and the synthesizing yield of the method reaches up to 99%.

The invention belongs to the field of medicine synthesis and provides a novel idelalisib preparation method. The novel idelalisib preparation method includes steps: in an appropriate solvent, subjecting a compound A to nucleophilic substitution reaction with B in existence of an acid-binding agent to obtain an intermediate C; hydrolyzing the compound C into an intermediate D under appropriate alkali action; subjecting the intermediate D and a compound E to condensation to obtain an intermediate F; in an appropriate solvent, subjecting the intermediate F to ring closing reaction under a catalytic system of HMDS (hexamethyl disilazane) / lewis acid to obtain a final product namely idelalisib.

The application belongs to the technical field of synthetic chemistry, and in particular relates to a method for synthesizing highly diastereoselective α-acyloxycyclic ketone compounds. The synthesis method provided by the invention comprises: reacting cyclic ketone compounds, Lewis acids and acyl oxidation reagents in a reaction solvent under the catalytic oxidation of hypervalent iodine reagents. The method has mild and controllable reaction conditions, simple and optimized operation, single product and high diastereoselectivity, and is applicable to various cyclic ketone compounds. Compared with the prior art, the present invention has the advantage that the product prepared by the above method has a diastereoisomer selectivity as high as 12:1, which is suitable for the preparation of α-acyl in specific stereoconfiguration in laboratories and factories. Oxycyclic ketone drug intermediates and fine chemicals.

The invention discloses a light cut-off filter and a preparation method and application thereof. A thick-layer two-dimensional transition metal chalcogenide film or a hexagonal boron nitride film is directly grown on an optical substrate. A Mo film plated on quartz glass is vulcanized or selenized into MoS2 and MoSe2 films by using a metal film conversion method, the obtained MoX2 (X is equal to S, Se)-based optical filter shows relatively low absorbance in a near-infrared band range of 1000-2500nm, the absorbance in a wavelength range of 500-1000nm is remarkably increased along with the reduction of the wavelength, and the absorption in an ultraviolet band range of 200-400nm is strong; and an h-BN film is directly prepared on glass by using a low-pressure chemical vapor deposition (LPCVD) method, and the obtained h-BN-based optical filter has very high transmittance (greater than 75%) in a visible-near infrared band range of 400-2500nm, and strong absorption is shown in an ultraviolet band range of 200-400nm.

The invention provides an Idelalisib synthesis method. The method comprises steps as follows: a compound 3 is processed with hydrogen in the presence of a hydrogenation catalyst and a solvent, nitro is enabled to be reduced, and an amino compound II is obtained; the compound II and N-Boc protected L-2-aminobutyric acid are subjected to condensation in the presence of alkali and a carboxylic acid activator or in the presence of alkali and a condensation agent, and an intermediate I is obtained; the intermediate I is subjected to a ring closing reaction in an appropriate solvent under the action of a hexamethyldisilazane / lewis acid catalytic system, and a compound 7 is obtained; the compound 7 reacts with 6-chloro-9-(2-tetrahydropyran) purine in an appropriate solvent in the presence of an acid-binding agent, and a compound III is obtained; the compound III is subjected to protecting group removal with an appropriate reagent, and Idelalisib is obtained. A reaction path is shown in the specification. The preparation method has the advantages that the reaction conditions of each step are mild, the post-processing is simple and easy to implement and the total yield is high, and the preparation method is environment-friendly and is very suitable for industrial production.

The invention discloses a display substrate, a preparation method thereof, and a display device. The display substrate includes a plurality of pixel island regions, empty regions and connection bridge regions. The preparation method includes: providing a hard substrate; forming a first groove and a second groove on one side of the substrate, the first groove Corresponding to the pixel island region, the second groove corresponds to the connecting bridge region; the display substrate is prepared on the side of the substrate where the first groove and the second groove are formed, and the pixel island region is located in the first In the groove area, the connecting bridge area is located in the second groove area, and the empty area is located in the area outside the first groove and the second groove; separating the substrate from the display substrate to obtain The display substrate. In the process of preparing the display substrate by using the method, the step difference between the empty area and other areas is greatly reduced, avoiding film residue in the hollow area in the subsequent process, avoiding defects caused by poor local disconnection, and improving the yield of the display substrate.

The invention provides a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. According to the manufacturing method of the semiconductor device of the invention, the process of forming a protective layer above a contact hole etch stop layer is added before the process step of removing a dummy gate. According to the method, formation of a recess above the contact hole etch stop layer in the process of removing the dummy gate is avoided, formation of metal residue above the contact hole etch stop layer in the process of forming a metal gate is avoided, generation of leakage current is avoided to a certain extent, and the performance of the semiconductor device is improved. According to the semiconductor device of the invention, a protective layer is formed above a contact hole etch stop layer. As the semiconductor device has the protective layer, that metal residue is not formed above the contact hole etch stop layer is ensured, generation of leakage current is avoided to a certain extent, and the performance of the semiconductor device is improved.

The invention discloses a catalyst system for preparing aliphatic polyester and a method for using it to catalyze the synthesis of aliphatic polyester. 2 1,8-diazabicycloundec-7-ene is reacted with organic carboxylic acid under protection and a certain temperature, and vacuum-dried to obtain a catalyst system for preparing aliphatic polyester; the catalyst system, cyclic acid anhydride 1. Organic solvent and epoxide react at a certain temperature, dissolve the reaction system with chloroform, and then use n-hexane as a sedimentation agent for sedimentation to obtain aliphatic polyester. The catalytic system has high catalytic efficiency, does not introduce any metal ions, avoids the metal residue problem caused by the traditional metal catalytic system, is green and environmentally friendly, and improves the possibility of using aliphatic polyester in the field of biomedicine.

The present invention relates to a kind of preparation method of 2-pyrrolidone compound, this method takes 1,6-enyne compound as raw material, iodobenzene acetate is used as oxidant, and trimethylsilyl azide, N- The reaction of chlorosuccinimide is convenient to prepare 2-pyrrolidone compounds with excellent yield.