52results about How to "Avoid Metal Residue" patented technology

The invention belongs to the technical field of synthetic chemistry and particularly relates to a method for synthesizing 1-iodo-alkyne in a high-selectivity manner. The method is mild in reaction condition, controllable in reaction product, single in product, easy in product purification, high in chemical selectivity, simple in synthesizing step, safe, reliable, green, environmentally friendly, applicable to various terminal alkyne reaction substrates and suitable for industrial production, and the synthesizing yield of the method reaches up to 99%.

The invention discloses an enhancer for a touch screen edge enhancing process. The enhancer is prepared by sequentially mixing pure water, 70% sulfuric acid, 70% ammonium fluoride, 49% hydrofluoric acid, 99% acetic acid and 37% hydrochloric acid at the mass ratio of (0.5-0.6) to (1-1.1) to (0.025-0.035) to (0.1-0.2) to (0.02-0.03) to (0.001-0.002), wherein the sulfuric acid can smoothen small scars on the surface of glass and is not easy to volatilize, so that the utilization rate of the enhancer is improved; the hydrofluoric acid mainly functions as etching and is capable of eliminating micro cracks in the glass; ammonium fluoride can take an effect of etching the glass after being mixed with sulfuric acid, and can form a buffer solution together with hydrofluoric acid; acetic acid is conducive to the improvement of the solubility of calcium sulfate and calcium fluoride generated from an reaction between the enhancer and the glass so as to avoid the generation of a precipitate; hydrochloric acid can be used for effectively removing metal impurities included in the glass; and the mixed acid is utilized as the enhancer, so that the problem of metal residue in etching when hydrofluoric acid is merely adopted can be avoided, and the strength of a touch screen is enhanced.

The invention discloses a preparation method of a carbon dioxide-based polyester-polycarbonate copolymer. The method comprises the following steps: adding reaction monomers phthalic anhydride, epoxypropane, a branching agent and a catalyst into a high-pressure reaction kettle, then introducing high-purity carbon dioxide gas, and heating to carry out ring-opening copolymerization reaction; and after the reaction is finished, performing precipitating, drying and crushing to obtain the purified branched copolymer. The copolymer is formed by copolymerization of propylene oxide, carbon dioxide, phthalic anhydride and a small amount of branching agent, and PPC-P is modified. The branching agent can open a ring and connect a polymer chain, so that the molecular weight and the distribution index of the copolymer are improved; the melt index is obviously reduced compared with that of the copolymer without adding the branching agent, so that the mechanical strength of the copolymer is improved; and the copolymer has good light transmission.

The invention belongs to the technical field of synthetic chemistry and particularly relates to a method for synthesizing a 1, 2-diiodo-olefin compound in a high-selectivity manner. The method is mild in reaction condition, controllable in reaction product, single in product, easy in product purification, high in chemical selectivity, simple in synthesizing step, safe, reliable, green, environmentally friendly, applicable to various terminal alkyne reaction substrates and suitable for industrial production, and the synthesizing yield of the method reaches up to 99%.

The invention discloses a metal-insulator-metal (MIM) capacitor. The grain size of metal of a first conductive layer and a second conductive layer of the capacitor is 1.2 to 2.5mu m, so that the problem of metal residues generated in the process of etching the MIM capacitor is solved. Meanwhile, the invention discloses a preparation method for the MIM capacitor. The idle time of a sputtering machine table is detected before each lot of chips are subjected to metal sputtering by the method, so that the problem of the metal residues generated in the etching process due to too small grains of the sputtered metal caused by low process stability of the sputtering machine table is solved.

The invention discloses chiral aromatic amine compounds and a preparation method thereof. The chiral aromatic amine compounds are characterized in that under the alkaline condition, compounds I reactwith compounds II to obtain corresponding products, namely chiral aromatic amine compounds labeled by compounds with structural formulas III, IV and V or enantiomers, despinners, diastereoisomers or isotopes thereof: (the formula is shown in the description), wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16 and R17 are separately selected from any group, and X is chlorine or bromine. The chiral aromatic amine compounds with high optical purity (an ee value is greater than 99 percent) have wide application in the fields of bioactivity, materials, chiral ligands, chiral catalysts and the like, and can be further derived to prepare recemic or chiral aromatic amine ligands serving as catalyst for asymmetric catalytic reaction. The invention lays a foundation for developing novel catalysts for the asymmetric catalytic reaction and has economic practicality and industrial application prospect.

The invention provides an organic light emitting diode display and a manufacturing method thereof. An inorganic insulating layer covering a grid electrode is formed; an organic insulating layer is formed on the inorganic insulating layer to achieve a planarization effect; the problem of metal residue during etching of a subsequently formed metal layer due to an abrupt slope is avoided; a groove isformed in the position, corresponding to the grid electrode, of the organic insulating layer, a metal component used for forming a capacitor with the grid electrode is formed in the groove and arranged corresponding to the grid electrode, the distance between the grid electrode and the metal component is reduced, and the capacitance of the capacitor composed of the grid electrode and the metal component is large.

The invention discloses a manufacturing method of a zeroth interlayer film. The method comprises the steps of: the step 1, forming first gate structures at the surface of a semiconductor substrate, wherein areas between the first gate structures are spacer areas, a side wall is formed, and a contact hole etching stop layer consisting of a nitride film is formed; the step 2, growing a zeroth interlayer film; the step 3, performing first selective chemical mechanical polishing to polish the zeroth interlayer film and stopping on the contact hole etching stop layer on the top surface of the sidewall; the step 4, performing second non-selective chemical mechanical grinding to grind the oxide film and the nitride film simultaneously and stop on the contact hole etching stop layer on the top surface of a polysilicon gate; and the step 5, performing third selective etching to remove the residual contact hole etching stop layer on the top surface of the polysilicon gate. The manufacturing method of the zeroth interlayer film can eliminate the butterfly defect of the zeroth interlayer film and can improve the product yield.

The invention discloses a spinning cotton cleaner capable of adjusting the material quantity, and belongs to the technical field of spinning. The spinning cotton cleaner capable of adjusting the material quantity comprises a feeding bin, a material storage box and an operation case, wherein the outer wall of the feeding bin is fixedly connected with the outer wall of the material storage box; a telescopic column is arranged in the material storage box; one end of the telescopic column is fixedly connected with the inner wall of the material storage box; a squeezing plate is fixedly installed at the other end of the telescopic column; a discharging device is arranged at the bottom of the squeezing plate; the outer wall of the discharging device is fixedly connected with the inner wall of the material storage box; and a material conveying wheel is movably installed on the inner wall of the material storage box. The discharging amount and the discharging speed of cotton can be controlledthrough the rotating opening and closing degree of rotating blades; cotton feeding can be controlled according to the actual situation; the cotton feeding speed can be further controlled through the material conveying wheel, and the cotton is opened; and the squeezing plate squeezes the cotton to increase the discharging amount of the cotton in the material storage box, so that the cotton is prevented from remaining on the discharging device.

The invention provides a bottle recycling device, and belongs to the technical field of machinery. The bottle recycling device comprises a rack, wherein an accommodating groove is fixed to the rack; a limiting area used for accommodating a bottle body is formed at the bottom of the accommodating groove; a fixed frame is fixed to the rack; a first push rod motor is fixed to the fixed frame; a lifting frame is fixed to a push rod of the first push rod motor; a pressing and overturning mechanism used for pressing the bottom of a bottle into the accommodating area and enabling the inner edge of a metal block on the upper portion of the bottle to be overturned outwards is fixed to the lifting frame; the lifting frame is further provided with a pushing and pressing mechanism used for overturning the inner edge of the overturned metal ring to be attached to the outer wall of the bottle body, and an upper pressing mechanism used in cooperation with a pushing frame mechanism and arranged on the rack; and the pushing and pressing mechanism and the upper pressing mechanism are matched to clamp the inner edge of the metal ring and press the inner edge downwards, so that the whole metal ring falls off from the bottle.

The embodiment of the invention provides a touch display panel and touch display equipment. The touch display panel comprises a display substrate, a packaging layer, a touch electrode and a touch wire which are arranged in sequence. The touch wire arranged on the side, away from the display substrate, of the packaging layer comprises a first end connected with the corresponding touch electrode and a second end extending from the first end to the edge, away from the display area, of the organic packaging layer, and the orthographic projection of the second end on the organic packaging layer included in the packaging layer is completely covered with the organic packaging layer. Thus, it can be avoided that the second ends of the touch wires exceed the edge of the organic packaging layer, and in the patterning process of the touch wires, even if photoresist accumulation exists at the positions exceeding the edge of the organic packaging layer to cause uneven exposure, the touch wires do not exist at the positions exceeding the edge of the organic packaging layer, so that short circuit of the adjacent touch wires due to metal residues can be avoided, and touch failure of the touch display panel is avoided.

The invention discloses a light cut-off filter and a preparation method and application thereof. A thick-layer two-dimensional transition metal chalcogenide film or a hexagonal boron nitride film is directly grown on an optical substrate. A Mo film plated on quartz glass is vulcanized or selenized into MoS2 and MoSe2 films by using a metal film conversion method, the obtained MoX2 (X is equal to S, Se)-based optical filter shows relatively low absorbance in a near-infrared band range of 1000-2500nm, the absorbance in a wavelength range of 500-1000nm is remarkably increased along with the reduction of the wavelength, and the absorption in an ultraviolet band range of 200-400nm is strong; and an h-BN film is directly prepared on glass by using a low-pressure chemical vapor deposition (LPCVD) method, and the obtained h-BN-based optical filter has very high transmittance (greater than 75%) in a visible-near infrared band range of 400-2500nm, and strong absorption is shown in an ultraviolet band range of 200-400nm.

The invention discloses a catalyst system for preparing aliphatic polyester and a method for using it to catalyze the synthesis of aliphatic polyester. ₂ 1,8-diazabicycloundec-7-ene is reacted with organic carboxylic acid under protection and a certain temperature, and vacuum-dried to obtain a catalyst system for preparing aliphatic polyester; the catalyst system, cyclic acid anhydride 1. Organic solvent and epoxide react at a certain temperature, dissolve the reaction system with chloroform, and then use n-hexane as a sedimentation agent for sedimentation to obtain aliphatic polyester. The catalytic system has high catalytic efficiency, does not introduce any metal ions, avoids the metal residue problem caused by the traditional metal catalytic system, is green and environmentally friendly, and improves the possibility of using aliphatic polyester in the field of biomedicine.