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Light cut-off optical filter and preparation method and application thereof

A technology of optical filter and transformation method, which is applied in the field of materials, and can solve problems such as wrinkles, affecting the macroscopic uniformity of optical filters, and affecting optical filtering performance

Active Publication Date: 2021-09-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of the transfer process will bring a series of problems, such as film damage, wrinkles, metal and etchant residues, etc., which will affect the macroscopic uniformity of the obtained optical filter and affect its filtering performance.

Method used

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  • Light cut-off optical filter and preparation method and application thereof
  • Light cut-off optical filter and preparation method and application thereof
  • Light cut-off optical filter and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] combine figure 1 Instructions are based on MoX 2 (X=S,Se) filter preparation process. Quartz glass wafer after cleaning by magnetron sputtering coating method A layer of 10nm thick molybdenum film is deposited on the surface (or directly purchase a quartz glass wafer of the corresponding size coated with molybdenum film), and the quartz glass coated with molybdenum film is cleaned again, as the growth MoX 2 (X=S,Se) substrate (hereinafter referred to as growth substrate). The growth substrate was placed on a quartz glass carrier plate, and the carrier plate together with the growth substrate was placed in the middle of a three-inch single-temperature zone tube furnace, and sulfur powder or selenium powder was placed upstream as a transforming agent. For MoS 2 For the preparation of , the sulfur powder is 12-18 cm away from the growth substrate, while for MoSe 2 The selenium powder is 8-10 cm away from the growth substrate.

[0042] in MoS 2 In the preparation pr...

Embodiment 2

[0047] combine Image 6 The fabrication process of h-BN-based filters is described. The cleaned quartz glass disc On a long quartz carrier plate, place the quartz carrier plate together with the quartz glass sheet in the center of the temperature zone of the three-inch three-temperature zone tube furnace. Weigh about 0.3 g of borane ammonia (BH 3 —NH 3 ) is placed in a small tube, the small tube is connected to the branch of the tee interface at the air inlet, 65-75 cm from the furnace body, heated with a self-made heating belt, and the reaction system is evacuated to 35-55Pa by a rotary vane mechanical vacuum pump . During the preparation of h-BN, a mixed gas consisting of 150 sccm of argon and 100 sccm of hydrogen was introduced into the reaction system as a carrier gas, and the tube furnace was heated to 1100 °C within 70 min and stabilized at a constant temperature of 1100 °C for about 30 min , turn on the self-made heater to heat the borane ammonia to about 85 ℃ t...

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Abstract

The invention discloses a light cut-off filter and a preparation method and application thereof. A thick-layer two-dimensional transition metal chalcogenide film or a hexagonal boron nitride film is directly grown on an optical substrate. A Mo film plated on quartz glass is vulcanized or selenized into MoS2 and MoSe2 films by using a metal film conversion method, the obtained MoX2 (X is equal to S, Se)-based optical filter shows relatively low absorbance in a near-infrared band range of 1000-2500nm, the absorbance in a wavelength range of 500-1000nm is remarkably increased along with the reduction of the wavelength, and the absorption in an ultraviolet band range of 200-400nm is strong; and an h-BN film is directly prepared on glass by using a low-pressure chemical vapor deposition (LPCVD) method, and the obtained h-BN-based optical filter has very high transmittance (greater than 75%) in a visible-near infrared band range of 400-2500nm, and strong absorption is shown in an ultraviolet band range of 200-400nm.

Description

technical field [0001] The invention belongs to the field of materials, in particular to two-dimensional transition metal chalcogenides (TMDCs) based on two-dimensional transition metal chalcogenides (TMDCs) and hexagonal boron nitride (h -BN) optical filter and its preparation method and application. Background technique [0002] The absorption spectra of two-dimensional materials, such as graphene, TMDCs, and h-BN, cover a wide range of the electromagnetic spectrum, from hundreds of nanometers to millimeters. Graphene is the earliest and most mature two-dimensional material. The unique Dirac cone in the energy band structure endows it with novel optical properties, such as non-selective absorption of light in the wavelength range of 400-2500nm. Unlike the semi-metallic two-dimensional material - graphene, semiconductor-type and insulator-type two-dimensional materials can achieve selective absorption of electromagnetic waves in certain bands due to their optical band gaps...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/35C23C14/30C23C14/58C23C16/455C23C16/34G02B5/22
CPCC23C14/185C23C14/18C23C14/35C23C14/30C23C14/5866C23C16/455C23C16/342G02B5/22
Inventor 张艳锋周帆张哲朋杨鹏飞刘忠范
Owner PEKING UNIV
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