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A light-cutting filter, its preparation method and application

A technology of cut-off filter and filter, applied in the field of materials, can solve the problems of affecting the macroscopic uniformity of the filter, residual metal and etchant, affecting the filter performance, etc., and achieve good thermal stability and chemical stability. , the effect of improving macroscopic uniformity and good hydrophobicity

Active Publication Date: 2022-06-28
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of the transfer process will bring a series of problems, such as film damage, wrinkles, metal and etchant residues, etc., which will affect the macroscopic uniformity of the obtained optical filter and affect its filtering performance.

Method used

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  • A light-cutting filter, its preparation method and application
  • A light-cutting filter, its preparation method and application
  • A light-cutting filter, its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0041] combine figure 1 Instructions are based on MoX 2 (X=S,Se) filter preparation process. Quartz glass wafer after cleaning by magnetron sputtering coating method A layer of 10nm thick molybdenum film is deposited on the surface (or directly purchase a quartz glass wafer of the corresponding size coated with molybdenum film), and the quartz glass coated with molybdenum film is cleaned again, as the growth MoX 2 (X=S,Se) substrate (hereinafter referred to as growth substrate). The growth substrate was placed on a quartz glass carrier plate, and the carrier plate together with the growth substrate was placed in the middle of a three-inch single-temperature zone tube furnace, and sulfur powder or selenium powder was placed upstream as a transforming agent. For MoS 2 For the preparation of , the sulfur powder is 12-18 cm away from the growth substrate, while for MoSe 2 The selenium powder is 8-10 cm away from the growth substrate.

[0042] in MoS 2 In the preparation pr...

Embodiment 2

[0047] combine Image 6 The fabrication process of the h-BN-based filter is described. The cleaned quartz glass disc On a long quartz carrier plate, place the quartz carrier plate together with the quartz glass sheet in the center of the temperature zone of the three-inch three-temperature zone tube furnace. Weigh about 0.3 g of borane ammonia (BH 3 —NH 3 ) is placed in a small tube, the small tube is connected to the branch of the tee interface at the air inlet, 65-75 cm from the furnace body, heated with a self-made heating belt, and the reaction system is evacuated to 35-55Pa by a rotary vane mechanical vacuum pump . During the preparation of h-BN, a mixed gas consisting of 150 sccm of argon and 100 sccm of hydrogen was introduced into the reaction system as a carrier gas, and the tube furnace was heated to 1100 °C within 70 min and stabilized at a constant temperature of 1100 °C for about 30 min , turn on the self-made heater to heat the borane ammonia to about 85 ...

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Abstract

The invention discloses a light-cutting optical filter and its preparation method and application. A thick two-dimensional transition metal chalcogenide film or a hexagonal boron nitride film is directly grown on an optical substrate. Among them, the Mo film coated on the quartz glass is sulfided or selenized into MoS by metal thin film conversion method. 2 and MoSe 2 Thin films, obtained based on MoX 2 (X=S, Se) filters show low absorbance in the near-infrared range of 1000-2500nm, and the absorbance increases significantly with the decrease of wavelength in the wavelength range of 500-1000nm. The absorption is strong in the ultraviolet range; the h-BN film is directly prepared on the glass by the low-pressure chemical vapor deposition (LPCVD) method, and the obtained h-BN-based optical filter has a visible-near-infrared range of 400-2500nm It has a high transmittance (>75%), and shows strong absorption in the ultraviolet range of 200-400nm.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to two-dimensional transition metal chalcogenide compounds (TMDCs) and hexagonal boron nitride (h) based on two-dimensional transition metal chalcogenide compounds (TMDCs) and hexagonal boron nitride (h -BN) filter and its preparation method and application. Background technique [0002] Two-dimensional materials, such as graphene, TMDCs, and h-BN, have absorption spectra that cover a wide range of the electromagnetic spectrum, from the hundreds of nanometers to the millimeter scale. Graphene is the earliest and most mature two-dimensional material. The unique Dirac cone in its energy band structure endows it with novel optical properties, such as non-selective absorption of light in the wavelength range of 400-2500 nm. Different from the semi-metal two-dimensional material - graphene, semiconductor-type and insulator-type two-dimensional materials can achieve selective absorpt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/35C23C14/30C23C14/58C23C16/455C23C16/34G02B5/22
CPCC23C14/185C23C14/18C23C14/35C23C14/30C23C14/5866C23C16/455C23C16/342G02B5/22
Inventor 张艳锋周帆张哲朋杨鹏飞刘忠范
Owner PEKING UNIV
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