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A coaxial high-frequency high-power microwave device

A high-power microwave and high-frequency technology, which is applied to the circuit components of transit-time electron tubes, coupling devices of transit-time electron tubes, etc., can solve the problem of reduced microwave output efficiency, etc. The effect of compact size and improved microwave generation efficiency

Active Publication Date: 2021-10-15
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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Problems solved by technology

Generally, the higher the frequency of the device, the lower its microwave output efficiency will be

Method used

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  • A coaxial high-frequency high-power microwave device

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Embodiment 1

[0028] Such as figure 1 As shown, a high-frequency high-power microwave device in this embodiment includes a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve. One end of the circular waveguide sleeve is provided with a cathode for emitting a circular electron beam. The inner diameter of the circular waveguide sleeve is 14.6 mm, and the diameter of the inner conductor is 10 mm.

[0029] The coaxial reflection area, beam pre-modulation area, phase modulation area and beam conversion area are arranged in sequence along the electron beam transmission direction, and the reflection area, beam pre-modulation area, phase modulation area and beam conversion area form a high-frequency structure; the reflection area , the beam pre-modulation area, the phase modulation area and the beam conversion area respectively set an annular groove-shaped cavity with a rectangular section on the corresponding position of the circular waveguide sleeve wall an...

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Abstract

The invention discloses a coaxial high-frequency high-power microwave device, which comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve. A high-frequency structure is arranged inside the circular waveguide sleeve; The coaxial reflection area, beam pre-modulation area, phase modulation area and beam conversion area are set in sequence in the transmission direction; the reflection area, beam pre-modulation area, phase modulation area and beam conversion area are respectively located on the wall and inner An annular groove-shaped cavity is arranged at the corresponding position of the conductor, and the wall of the circular waveguide sleeve and the cavity at the corresponding position of the inner conductor constitute a reflection cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity; after the beam conversion area Set radially inwardly protruding ring-shaped collectors; the ring-shaped electron beam with a voltage of 400kV and a current of 9.0kA is transmitted in the microwave device under the guidance of an axial magnetic field with a magnetic field strength of 1.2T, generating 70GHz high-frequency and high-power microwaves. The coaxial high-frequency high-power microwave device of the present invention can generate high-frequency high-power microwaves, and effectively improves the microwave generation efficiency.

Description

technical field [0001] The invention relates to a coaxial high-frequency high-power microwave device and belongs to the technical field of high-power microwave devices. Background technique [0002] High-power microwave generally refers to electromagnetic waves with peak power above 100MW and operating frequency in the range of 1-300GHz. With the research and application requirements of high-power microwave technology, high-power microwave sources are gradually developing to high-frequency structures. [0003] The axial O-shaped high-power microwave device is a kind of high-power microwave device that is widely used due to the easy guidance of the electron beam brought by the structure and the variable combination of the structure. The increase in device frequency drastically reduces the radial size of the device, thereby causing a reduction in power capacity. This physical mechanism is a key problem that must be solved for high-frequency and high-power microwave devices. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J23/36H01J23/24
CPCH01J23/24H01J23/36
Inventor 丁恩燕张运俭
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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