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High-frequency high-power microwave device

A high-power microwave and high-frequency technology, which is applied to the circuit components of transit-time electron tubes, coupling devices of transit-time electron tubes, etc., can solve the problems of reduced power capacity, reduced radial size, etc., and achieves light weight. , the effect of compact axial and radial dimensions and compact structure

Active Publication Date: 2020-01-21
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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AI Technical Summary

Problems solved by technology

The increase in device frequency drastically reduces the radial size of the device, resulting in a reduction in power capacity

Method used

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  • High-frequency high-power microwave device

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Embodiment 1

[0028] Such as figure 1 As shown, a high-frequency high-power microwave device in this embodiment includes a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve. One end of the circular waveguide sleeve is provided with a cathode emitting an annular electron beam. The inner diameter of the circular waveguide sleeve is 14.6 mm, and the diameter of the inner conductor is 8 mm.

[0029] The coaxial reflection area, beam pre-modulation area, phase modulation area and beam conversion area are arranged in sequence along the electron beam transmission direction; the reflection area, beam pre-modulation area, phase modulation area and beam conversion area are respectively arranged in the An annular groove-shaped reflective cavity with a rectangular section, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity are arranged on the top.

[0030] The outer diameter of the reflective cavity in the reflective area is 1...

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Abstract

The invention discloses a high-frequency high-power microwave device, which comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve. An electron beam transmission channel with an inner diameter of 8mm and an outer diameter of 14.6mm is formed between the inner conductor and the circular waveguide sleeve. A high-frequency structure is sequentially provided with a reflection region, a beam current pre-modulation region, a phase modulation region and a beam wave conversion region which are coaxial in the electron beam transmission direction. An annular collector protruding inwards in the radial direction is arranged behind the beam wave conversion region. An annular electron beam with the inner diameter of 12mm, the outer diameter of 12.6mm, thevoltage of 400kV and the beam intensity of 7.3kA is transmitted in the high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.5T, and high-frequency high-power microwaves with the frequency of 67.4GHz are generated. The high-frequency high-power microwave device is simple in structural size, and has the advantages of being small, light and easy to assemble.

Description

technical field [0001] The invention relates to a high-frequency and high-power microwave device, belonging to the technical field of high-power microwave devices. Background technique [0002] High-power microwave generally refers to electromagnetic waves with peak power above 100MW and operating frequency in the range of 1-300GHz. With the research and application requirements of high-power microwave technology, high-power microwave sources are gradually developing to high-frequency structures. [0003] The axial O-shaped high-power microwave device is a kind of high-power microwave device that is widely used due to the easy guidance of the electron beam brought by the structure and the variable combination of the structure. The increase in device frequency drastically reduces the radial size of the device, thereby causing a reduction in power capacity. This physical mechanism is a key problem that must be solved for high-frequency and high-power microwave devices. In t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/36H01J23/16
CPCH01J23/16H01J23/36
Inventor 丁恩燕张运俭
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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