Method for forming semiconductor device and semiconductor structure, and semiconductor device

Abstract

Embodiments of the present disclosure provide a method for forming a semiconductor device and a semiconductor structure, and a semiconductor device, including a method and a device for forming a field effect transistor in a base having first fins and second fins extending from the base. A high-k gate dielectric layer and a ferroelectric insulator layer are deposited over the first fin and the second fin. In some embodiments, a dummy gate layer is deposited over the ferroelectric insulator layer over the first and second fins to form a first gate stack over the first fin and form a second Two gates are stacked on the second fin. The dummy gate layer of the first gate stack (maintaining the ferroelectric insulator layer) is then removed to form the first trench. And removing the dummy gate layer of the second gate stack and the ferroelectric insulator layer to form a second trench. At least one metal gate layer is formed in the first trench and the second trench.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor technology, and in particular to a semiconductor structure including negative capacitance field effect transistors (NCFETs). Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Advances in technology in integrated circuit materials and design have created generations of integrated circuits, each with smaller and more complex circuits than the previous generation. During the evolution of integrated circuits, functional density (ie, the number of interconnected devices per chip area) typically increases as geometry (ie, the smallest component (or line) that can be created using a production process) decreases. [0003] Transistors are typically circuit components or elements formed as part of semiconductor manufacturing. A field effect transistor (FET) is a type of transistor. In general, a transistor includes a gate stack formed between...

AI Technical Summary

Problems solved by technology

The fabrication of such FinFETs that provide sufficient performance, such as the implementation of negative capacitance devices, is becoming more and more challenging

Images