Tunneling field effect transistor and forming method thereof

Abstract

The invention relates to a tunneling field effect transistor and a forming method thereof. The forming method comprises steps that a substrate is provided, the substrate comprises a base, an insulating layer located on the base and a semiconductor layer located on the insulating layer, and a source region, a drain region and a channel region located between the source region and the drain region are arranged in the semiconductor layer; the channel region of the semiconductor layer is removed, and an opening is formed in the semiconductor layer, and a side wall of the opening exposes the sourceregion and the drain region; first ion implantation of the side wall of the source region of the opening is performed; after first ion implantation, oxidation treatment is carried out on a surface ofa side wall of the drain region and a surface of a side wall of the source region of the opening, a first oxide layer is formed on a surface of the side wall of the drain region, a second oxide layeris formed on a surface of the side wall of the source region, and the thickness of the second oxide layer is larger than that of the first oxide layer; the first oxide layer and the second oxide layer are etched till the surface of the side wall of the drain region of the opening is exposed, and a tunneling dielectric layer is formed on the surface of the side wall of the source region. The forming method is advantaged in that a device formed by the method is good in performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a tunneling field effect transistor and a forming method thereof. Background technique [0002] As the feature size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET, Metal Oxide Semiconductor Field Effect Transistor) decreases continuously, negative effects such as short channel effect of the device are increasingly aggravated. Due to the theoretical limit of KT / q, the sub-threshold swing of traditional MOSFET devices is already close to the limit value of 60mV / dec and cannot be further reduced. Therefore, as the threshold voltage of the device decreases, the leakage current in the subthreshold region continues to increase, and the dynamic power consumption of the device cannot be ignored, which has gradually become an important factor restricting the development of integrated circuits. [0003] Tunneling Field Effect Transistor (TFET, Tunneling Field Effec...

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Problems solved by technology

[0005] However, the quality of the source region of the tunneling field effect transistor with the tunneling dielectric l

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