Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Non-contact type measuring method and device

A non-contact, measurement method technology, applied in the direction of measuring devices, mechanical measuring devices, optical devices, etc., can solve the problems of low processing efficiency and large measurement error, so as to improve processing efficiency, high measurement accuracy, The effect of high accuracy of measurement results

Inactive Publication Date: 2020-02-28
BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are many non-contact methods for measuring the thickness difference in the wafer on the market, which need to be carried out between the polishing and polishing of the wafer, and the wafer needs to be moved to realize the measurement of the wafer. After the measurement is completed, the machine can be turned on and polished again. , the processing efficiency is low, and the error of the measurement result is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-contact type measuring method and device
  • Non-contact type measuring method and device
  • Non-contact type measuring method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0045] Please refer to figure 1 As shown, the non-contact measuring device 100 provided in this embodiment is used to measure the thickness difference in the wafer. The non-contact measuring device 100 can be carried out synchronously with the polishing process of the wafer, which improves the processing of the wafer. efficiency and higher measurement accuracy.

[0046] The non-contact measuring device 100 includes a controller 110, a driving mechanism 130, a distance measuring device 150, a stage 170 and a reference positioning device 190, and the controller 110 is electrically connected to the driving mechanism 130, the distance measuring device 150 and the reference positioning device 190 respectively. .

[0047] The stage 170 is used to carry the wafer, which can drive the wafer to rotate for processing such as grinding and polishing.

[0048] The distance measuring device 150 is connected with the driving mechanism 130 and is used to move relative to the wafer driven by...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a non-contact type measuring method and device and relates to the technical field of wafer processing. The non-contact type measuring method is used for detecting the internalthickness difference of the wafer and comprises the following steps: controlling a driving mechanism to act to enable the driving mechanism to drive a distance measuring device to move to a second preset position from a first preset point in a plane parallel to a platform deck for bearing the wafer, wherein the perpendicular projection position of the first preset point on the wafer is positionedin the center of the wafer, and the perpendicular projection position of the second preset point on the wafer is positioned on the edge of the wafer; receiving multiple detecting data obtaining through detecting the perpendicular distance from the distance measuring device to the wafer by multiple times when the distance measuring device moves to the second preset point from the first preset point; and calculating the difference value of the maximum value and the minimum value in the multiple detecting data to obtain the internal thickness difference of the wafer. The non-contact type measuring method can be synchronously carried out with the wafer grinding and polishing process to improve the wafer processing efficiency, and the measuring precision is higher.

Description

technical field [0001] The invention relates to the technical field of wafer processing, in particular to a non-contact measurement method and device. Background technique [0002] The intra-chip thickness difference of the wafer is an important criterion for measuring the quality of wafer polishing. Therefore, in order to ensure the quality of wafer polishing, the polishing process often needs to be accompanied by the measurement of the intra-chip thickness difference. [0003] At present, there are many non-contact methods for measuring the thickness difference in the wafer on the market, which need to be carried out between the polishing and polishing of the wafer, and the wafer needs to be moved to realize the measurement of the wafer. After the measurement is completed, the machine can be turned on and polished again. , the processing efficiency is low, and the error of the measurement result is large. Contents of the invention [0004] The purpose of the present inv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B49/02B24B49/12G01B11/06G01B5/00
CPCB24B49/02B24B49/12G01B5/0004G01B11/06
Inventor 白阳衣忠波张文斌刘宇光贺东葛李远航
Owner BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com