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Method for improving hit battery electrode contact resistance and conductivity, electrode manufacturing method

A technology for battery electrodes and manufacturing methods, which is applied to circuits, electrical components, semiconductor devices, etc., can solve the problems of rising battery series resistance, high grid line conductivity, and high contact resistance, and achieve lower resistivity, lower conduction resistance, and lower The effect of contact resistance

Active Publication Date: 2021-10-01
上海润势科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] 1) The current common thermosetting resin system has poor wettability to the TCO layer, high contact resistance, and low-temperature silver paste and TCO adhesion will also decrease;
[0008] 2) Since the temperature of the entire baking process does not exceed 200°C, it is impossible for the silver powder in the low-temperature silver paste to melt and bond together. The overlap between the silver powder and the silver powder is only in physical contact, so the conductivity of the entire grid line is very large. The series resistance will also rise;
[0009] 3) Nano-sized metals (silver, aluminum, copper, etc.) are very easy to oxidize, and once oxidized, the conductivity is greatly reduced, which affects the long-term reliability of HIT batteries

Method used

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  • Method for improving hit battery electrode contact resistance and conductivity, electrode manufacturing method
  • Method for improving hit battery electrode contact resistance and conductivity, electrode manufacturing method
  • Method for improving hit battery electrode contact resistance and conductivity, electrode manufacturing method

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Embodiment 1

[0051] This embodiment provides a method for making electrodes on HIT cell silicon, including:

[0052] Step 1: Provide a silicon wafer. The silicon wafer generally includes an n-type c-Si substrate, i-type a-Si and p-type a-Si covering the front and back sides in sequence, and a TCO layer on the surface.

[0053]Step 2, making a metal layer on the surface of the silicon chip as a seed layer, the seed layer is mainly nano-metal (mainly silver or aluminum or its alloy, particle size below 500nm), the thickness after the process is below 10um, and the width is controlled below 30um, which can be Transfer to the front and back of the silicon wafer by inkjet, laser transfer, screen printing or other methods.

[0054] Step 3: Carry out the first heat treatment on the seed layer, the first heat treatment adopts laser selective area irradiation, and scans the seed layer to ensure that the spot will not be irradiated to the non-seed layer area; the spot size of the laser irradiation i...

Embodiment 2

[0058] This embodiment provides a method for making electrodes on HIT cell silicon, including:

[0059] Step 1: Provide a silicon wafer. The silicon wafer generally includes an n-type c-Si substrate, i-type a-Si and p-type a-Si covering the front and back sides in sequence, and a TCO layer on the surface.

[0060] Step 2, making a metal layer on the surface of the silicon chip as a seed layer, the seed layer is mainly nano-metal (mainly silver or aluminum or its alloy, particle size below 500nm), the thickness after the process is below 10um, and the width is controlled below 30um, which can be Transfer to the front and back of the silicon wafer by inkjet, laser transfer, screen printing or other methods.

[0061] Step 3: Carry out the first heat treatment on the seed layer, the first heat treatment adopts laser selective area irradiation, and scans the seed layer to ensure that the spot will not be irradiated to the non-seed layer area; the spot size of the laser irradiation ...

Embodiment 3

[0065] This embodiment provides a method for making electrodes on HIT cell silicon, including:

[0066] Step 1: Provide a silicon wafer. The silicon wafer generally includes an n-type c-Si substrate, i-type a-Si and p-type a-Si covering the front and back sides in sequence, and a TCO layer on the surface.

[0067] Step 2, make a metal layer on the surface of the silicon chip as a seed layer, the seed layer is mainly nano-metal (mainly silver and aluminum or its alloy, particle size below 500nm), the thickness after the process is below 10um, and the width is controlled below 30um, which can be Transfer to the front and back of the silicon wafer by inkjet, laser transfer, screen printing or other methods.

[0068] Step 3: Carry out the first heat treatment on the seed layer, the first heat treatment adopts laser selective area irradiation, and scans the seed layer to ensure that the spot will not be irradiated to the non-seed layer area; the spot size of the laser irradiation i...

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Abstract

A method for improving the contact resistance and electrical conductivity of an electrode of a HIT battery, and an electrode manufacturing method, comprising: making a nanometer metal layer on the surface of a silicon wafer as a seed layer, and performing a first heat treatment, wherein the first heat treatment adopts selective laser irradiation to irradiate the seed layer Scanning irradiation; coat the conductive layer slurry on the surface of the seed layer, the conductive layer slurry completely covers the seed layer, does not expose or leak the seed layer, and is in contact with the TCO layer on the surface of the silicon wafer; the seed layer is covered with the conductive layer slurry The second heat treatment is performed on the silicon wafer after feeding, so that the conductive paste on the surface of the seed layer is cured, and electrodes are formed together with the seed layer. In this application, through the first heat treatment of the seed layer + the second heat treatment of the silicon wafer, the contact resistance can be significantly reduced, and at the same time, the resistivity of the sub-grid can be significantly reduced, thereby greatly reducing the photo-generated current from the HIT cell substrate to the main grid. conduction resistance between them.

Description

technical field [0001] The invention relates to a method for improving the contact resistance and conductivity of battery electrodes, an electrode manufacturing method and its application, in particular to a manufacturing method capable of improving the contact resistance and conductivity of HIT batteries, an electrode manufacturing method, and the obtained HIT battery. Background technique [0002] Solar cells are devices that directly convert light energy into electrical energy through the photoelectric effect. With the gradual depletion of fossil energy, solar cells are used more and more widely as a new energy alternative. A solar cell is a device that converts the sun's light energy into electricity. [0003] Among various solar cells, N-type heterojunction cells (HIT or HJT or SHJ or HDT cells, such as figure 1 As shown) the technical process steps are relatively simple, no light-induced attenuation, no potential-induced attenuation, low temperature coefficient, ultra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/1864Y02P70/50
Inventor 张磊段晶晶郭明波
Owner 上海润势科技有限公司