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A two-dimensional ultrahigh frequency resonator

A resonator and ultra-high frequency technology, applied in the field of resonators, can solve the problems of low quality factor and electromechanical coupling coefficient, limited commercialization, complex structure of Lamb wave resonators, etc., and achieve high performance and increased electromechanical coupling coefficient. Effect

Active Publication Date: 2020-10-13
武汉敏声新技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the complex structure and low quality factor and electromechanical coupling coefficient of Lamb wave resonators are the main reasons that limit their commercialization.

Method used

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  • A two-dimensional ultrahigh frequency resonator
  • A two-dimensional ultrahigh frequency resonator
  • A two-dimensional ultrahigh frequency resonator

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] figure 1 It is a schematic diagram of the structure of a traditional one-dimensional Lamb wave resonator. As shown in the figure, the upper and lower surfaces of the piezoelectric layer 3 are composed of interdigitated upper electrodes. The upper electrodes are divided into two groups. One group applies positive voltage, called positive electrode 1, and one group applies negative voltage, called negative electrode. 2. When the pitch 4 of the interdigi...

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Abstract

The invention discloses a two-dimensional ultrahigh-frequency resonator, and particularly relates to an ultrahigh-frequency resonator mechanism capable of improving the electromechanical coupling coefficient of the resonator, the resonator is only provided with positive and negative electrodes distributed in the two-dimensional direction at the upper part of a piezoelectric material, the upper part of each electrode is provided with a bridge-shaped structure, and the distance between the electrodes is greater than four wavelengths. According to the resonator structure, the resonant frequency and the electromechanical coupling coefficient of the resonator can be effectively improved.

Description

technical field [0001] The invention relates to the field of resonators, in particular to a two-dimensional ultra-high frequency resonator. Background technique [0002] With the advent of the 5G era, the demand for multi-band high-frequency filters has increased dramatically. This puts higher demands on the performance of the piezoelectric resonator. As we all know, surface acoustic wave (SAW) resonators were widely used in RF front-ends in the early days, but due to their low phase velocity and limitations in lithography, it is difficult to maintain excellent performance in high frequency bands. Bulk wave resonators (BAW) are widely used in high frequency markets due to their low insertion loss and good power handling capabilities. Especially the film bulk acoustic resonator (FBAR) has high quality factor (Q) and high electromechanical coupling coefficient (K2). However, the resonant frequency of FBAR is determined by the thickness of the piezoelectric film, so it is di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/15H03H9/17H03H9/13
CPCH03H9/02228H03H9/02244H03H9/13H03H9/15H03H9/17H03H2009/02503H03H2009/155
Inventor 孙成亮刘婕妤周杰童欣高超邹杨
Owner 武汉敏声新技术有限公司