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A multi-crucible crystal growth furnace with independently controllable stations and control method

A crystal growth furnace, independent control technology, applied in the direction of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem that the stations can only be controlled by linkage, but cannot be controlled individually, and achieve the effect of avoiding uneven temperature field

Active Publication Date: 2021-04-20
江苏蓝鲸新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention can effectively solve the problem that the current multi-crucible crystal furnace stations can only be controlled in linkage, but cannot be controlled individually

Method used

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  • A multi-crucible crystal growth furnace with independently controllable stations and control method
  • A multi-crucible crystal growth furnace with independently controllable stations and control method

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Embodiment Construction

[0025] Below in conjunction with accompanying drawing, the present invention will be further described:

[0026] see figure 1 with figure 2 , a multi-crucible crystal growth furnace whose stations can be independently controlled, including a furnace body, a station lifting control device and a station heat insulation device. The furnace body has 4 to 6 single crystal growth stations, and the single crystal growth station is set The crystal growth unit has a circular structure; the heating element of the crystal growth unit is an annular heating element 5, which adopts an annular silicon-molybdenum rod and is vertically hoisted in the furnace body, and is lined with a uniform temperature tube 6 between the annular heating element 5 and the down-conducting tube 7 , the temperature field distribution of the single crystal growth station is uniform, which has little effect on crystal growth and is conducive to the growth of high-quality crystals; the temperature field of each si...

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Abstract

The invention discloses a multi-crucible crystal growth furnace with independently controllable stations and a control method, comprising a separate lifting device and a linked lifting device, the separate lifting device and the linked lifting device are respectively connected with a separate support plate and a linked support frame, and The single support plate is located on the lower side of the linkage support frame, and a number of station holes are uniformly arranged on the linkage support frame. The crucible guide device is arranged in the station hole, and the linkage support frame is also provided with a device capable of supporting the crucible guide device at the station. The crucible support frame in the hole, the upper part of the crucible guide device is interspersed and arranged in the furnace body, the bottom of the furnace body is provided with a furnace mouth for the crucible guide device to pass through, the crucible guide device is internally provided with a crucible, and the outer sleeve is equipped with a uniform The temperature tube, the outer side of the uniform temperature tube is equipped with a ring-shaped heating element, which is controlled jointly or independently through the temperature control system, and also includes a station heat insulation device that can isolate the space of the crucible lead-down device in the furnace body .

Description

technical field [0001] The invention relates to the field of artificial crystal growth equipment, in particular to a multi-crucible crystal growth furnace with independently controllable stations and a control method. Background technique [0002] It is an effective way to improve the efficiency of crystal growth by using a multi-station crucible descending crystal growth furnace to grow crystals. The common feature of multi-station crystal growth furnaces such as invention patent [CN 100451179C], invention patent [CN 106435730 A] and other patents is the use of a unified lifting platform and temperature control system, which can realize the growth of 15-30 crystals in one furnace. Synchronized growth. These multi-station crystal growth furnaces are suitable for preparing crystals with a short growth period, stable growth process, and not easy to leak, but they are not suitable for crystals with a risk of leaks during the growth process, because leaks occur at a certain sta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00
CPCC30B11/002C30B11/006
Inventor 郭海生宋克鑫王富贵徐卓李飞栾鹏庄永勇
Owner 江苏蓝鲸新材料有限公司
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