Semiconductor device
A semiconductor and conductive technology, applied in the direction of semiconductor devices, transistors, electric solid devices, etc., can solve the problems of slow switching speed and increased carrier discharge time
Pending Publication Date: 2020-03-27
KK TOSHIBA +1
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, increasing the amount of accumulated carriers to achieve low on-resistance also means increasing the carrier discharge time during turn off, resulting in slower switching speeds
Method used
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[0014] Embodiments will be described below with reference to the drawings. The same symbols are given to the same parts in the drawings, and the detailed description thereof will be appropriately omitted, and different parts will be described. In addition, the drawings are schematic or conceptual diagrams, and the relationship between the thickness and width of each part, the size ratio between parts, and the like are not necessarily the same as the actual ones. In addition, even when showing the same part, the respective dimensions and ratios may be shown differently in the drawings.
[0015] Furthermore, the arrangement and structure of each part are demonstrated using the X-axis, Y-axis, and Z-axis shown in each drawing. The X axis, the Y axis, and the Z axis are perpendicular to each other, and represent the X direction, the Y direction, and the Z direction, respectively. In addition, the Z direction may be described as upward and the opposite direction may be described ...
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Abstract
A semiconductor device includes a semiconductor portion including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, and a third semiconductor layer of the first conductivity type and a fourth semiconductor layer of the second conductivity type arranged side by side on the second semiconductor layer. The semiconductor device further includes first and second control electrodes provided in the semiconductor portion and alternately arranged in a first direction orthogonal to a stacking direction of the first and second semiconductor layers. The first control electrode faces the second semiconductor layer with a first insulating film interposed therebetween, and the second control electrode faces the second semiconductor layer with a second insulating film interposed therebetween. The first control electrode and the second control electrode have lower ends located in the first semiconductor layer, the first control electrode is in contact with one surface of a third insulating film, and the second control electrode is in contact with the other surface of the third insulating film.
Description
[0001] This application claims the priority of the basic application based on Japanese Patent Application No. 2018-174703 (filing date: September 19, 2018). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0002] The present invention relates to semiconductor devices. Background technique [0003] As a semiconductor device having a breakdown voltage of 600 V or higher, for example, an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor: IGBT) is used. Such a semiconductor device is used, for example, in a power converter, and therefore it is desired to have low steady-state loss and low switching loss, in other words, both low on-resistance and high switching speed. [0004] For example, in an IGBT with a trenched gate, in order to reduce the on-resistance, the trenched gate is adopted from the channel region to the n － A structure that extends deeply in the type base layer....
Claims
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IPC IPC(8): H01L29/739H01L29/423
CPCH01L29/7397H01L29/4236H01L29/401H01L29/66348H01L27/0727H01L29/8613H01L29/407H01L29/0696H01L29/4238H01L29/4232H01L27/0635
Inventor 末代知子岩鍜治阳子诹访刚史
Owner KK TOSHIBA