A kind of P-type composite electrode material of Gan-based LED suitable for aluminum wire pressure welding and its preparation method

A composite electrode, aluminum wire pressure welding technology, used in circuits, electrical components, semiconductor devices, etc., can solve the problems of influence, poor light transmission, etc., and achieve the effect of reducing cost, stable performance and improving efficiency

Active Publication Date: 2021-08-13
TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of thin-layer metal electrode has poor light transmittance, which will have a certain impact on light output.

Method used

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  • A kind of P-type composite electrode material of Gan-based LED suitable for aluminum wire pressure welding and its preparation method
  • A kind of P-type composite electrode material of Gan-based LED suitable for aluminum wire pressure welding and its preparation method
  • A kind of P-type composite electrode material of Gan-based LED suitable for aluminum wire pressure welding and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] (1) prepare the ITO raw material that purity is 99.999%, wherein SnO 2 The doping amount is 5wt%, In 2 o 3 The content is 95wt%;

[0042] (2) Put the ITO raw material in step (1) into the EB raw material boat, put the GaN sample carrying the P-type transparent electrode mask pattern after exposure and development on the sample holder, and the area not covered by the photoresist is transparent at this time In the electrode deposition area, close the intake valve, open the vacuum pumping system, and start vacuuming;

[0043] (3) When the degree of vacuum in step (2) reaches 10 -4 After Pa, start preparing to make ITO transparent conductive film; turn on the electron beam power supply to preheat, increase the electron beam current at a speed of 1mA / min, and when the film formation rate is stable at 2nm / min, open the baffle to start deposition; the online test thickness reaches At 50nm, take out the sample after the deposition; put the sample in the stripping solution t...

Embodiment 2

[0050] (1) prepare the ITO raw material that purity is 99.999%, wherein SnO 2 The doping amount is 8wt%, In 2 o 3 The content is 92wt%;

[0051] (2) Put the ITO raw material in step (1) into the EB raw material boat, put the GaN sample carrying the P-type transparent electrode mask pattern after exposure and development on the sample holder, and the area not covered by the photoresist is transparent at this time In the electrode deposition area, close the intake valve, open the vacuum pumping system, and start vacuuming;

[0052] (3) When the degree of vacuum in step (2) reaches 10 -4 After Pa, start preparing to make ITO transparent conductive film; turn on the electron beam power supply to preheat, increase the electron beam current at a speed of 2mA / min, and when the film formation rate is stable at 4nm / min, open the baffle to start deposition; the online test thickness reaches When the thickness is 65nm, the sample is taken out after the deposition; the sample is place...

Embodiment 3

[0059] (1) prepare the ITO raw material that purity is 99.999%, wherein SnO 2 The doping amount is 10wt%, In 2 o 3 The content is 90wt%;

[0060] (2) Put the ITO raw material in step (1) into the EB raw material boat, put the GaN sample carrying the P-type transparent electrode mask pattern after exposure and development on the sample holder, and the area not covered by the photoresist is transparent at this time In the electrode deposition area, close the intake valve, open the vacuum pumping system, and start vacuuming;

[0061] (3) When the degree of vacuum in step (2) reaches 10 -4 After Pa, start preparing to make ITO transparent conductive film; turn on the electron beam power supply to preheat, increase the electron beam current at a speed of 3mA / min, and when the film formation rate is stable at 6nm / min, open the baffle to start deposition; the online test thickness reaches At 80nm, the sample is taken out after the deposition; the sample is placed in the stripping...

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Abstract

The invention relates to a GaN-based LED P-type composite electrode material suitable for aluminum wire pressure welding and a preparation method thereof. A layer of ITO transparent conductive film is set on the P-GaN epitaxial film of the GaN-based LED as a transparent electrode in the composite electrode; a layer of Ti metal buffer layer is set on the transparent electrode, and an Al metal electrode layer is set on the Ti buffer layer. By optimizing the process parameters and thickness of the transparent conductive film, a film with good conductivity and light transmittance can be obtained; the metal electrode of the composite P electrode does not use conventional noble metals and rare metals such as Ni-Au, but chooses the commonly used N electrode. Ti‑Al achieves the same performance as Ni‑Au through optimization and adjustment of process parameters. On the basis of ensuring the stability of the optoelectronic properties of the device, the difficulty of the overall process is reduced, the material is more environmentally friendly, and the cost performance is higher, which has broad application prospects.

Description

technical field [0001] The invention relates to a P-type composite electrode material and a preparation method thereof, in particular to a P-type composite electrode material suitable for GaN-based LEDs welded by aluminum wires and a preparation method thereof. Background technique [0002] As a typical representative of the third-generation semiconductor material, GaN can be used to make LEDs, white LEDs, LDs, etc. in the full range of the visible light region through doping, and has a very broad application prospect. At present, the main factors restricting its application are luminous efficiency, lifetime, color rendering and production cost. The luminous efficiency is mainly reflected by the internal and external quantum efficiency. At present, the internal quantum efficiency of GaN-based LEDs in some bands of the visible light region can reach a high level through the structure and process optimization of the epitaxial chip, and the room for improvement is limited. In ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/40H01L33/42
CPCH01L33/40H01L33/42
Inventor 王雅欣唐松洁
Owner TIANJIN UNIV OF TECH & EDUCATION TEACHER DEV CENT OF CHINA VOCATIONAL TRAINING & GUIDANCE
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