Semiconductor device and method for forming the same

Abstract

A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacerand the second air spacer have different sizes. The invention also relates to the semiconductor device and a device for forming the same.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices and methods of forming semiconductor devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced several generations of ICs, where each generation has smaller and more complex circuits than the previous generation. In IC evolution processes, functional density (ie, the number of interconnected devices per chip area) has generally increased, while geometry size (ie, the smallest component (or line) that can be produced using a fabrication process) has decreased. This downscaling process often provides benefits by increasing production efficiency and reducing associated costs. This scaling down also increases the complexity of handling and manufacturing the ICs. [0003] For example, methods have been developed to form gate spacers with low dielectric constants....

AI Technical Summary

Problems solved by technology

However, while conventional methods of forming low-k dielectric gate spacers are often adequate, they have not been completely satisfactory in all respects

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