Fin field effect transistor and manufacturing method thereof

Abstract

The invention provides a manufacturing method of a fin field effect transistor. The method includes: forming a source region and a drain region on the surface of a silicon substrate; forming an oxidelayer on the surface of the silicon substrate and performing planarization processing on the oxide layer to enable the source region and the drain region to be exposed; etching the oxide layer in a channel region between the source region and the drain region, and removing the oxide layer in the channel region; forming an epitaxial layer on the surface of the oxide layer, and performing etching-back processing on the epitaxial layer, wherein the channel region is filled with the epitaxial layer; etching the oxide layer at two sides of the epitaxial layer in the channel region; forming a gate dielectric layer on the surface of the epitaxial layer of the channel region, wherein the gate dielectric layer covers the source region, the drain region and the channel region; and forming a gate onthe surface of the gate dielectric layer. The invention also provides a fin field effect transistor manufactured by employing the above method.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a fin field effect transistor and a manufacturing method thereof. 【Background technique】 [0002] A Fin Field Effect Transistor (FinFET) is a field effect transistor with a fin-shaped channel structure. In a fin field effect transistor, a fin (Fin) is vertically formed on the surface of a silicon substrate, and the fin serves as a channel, and the gate controls the channel by covering the surface of the fin. [0003] In the manufacturing process of fin field effect transistors, when the fins are formed, the surface of the device will become uneven; if the height of the fins is higher, it will have a greater impact on subsequent manufacturing processes, such as photolithography, glue coating The effect and exposure effect will be deteriorated. But for the fin device, the higher the fin, the greater the current flow capability of the fin field effect tr...

AI Technical Summary

Problems solved by technology

In view of the unevenness problem in the fin field effect transistor process, the fin cannot be made too high; therefore, there is a contradiction between the fin height manufacturing process of the fin field effect transistor and the device performance

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