Crimping type IGBT device structure optimization design method

Abstract

The invention relates to the technical field of high-power semiconductor device structure design. The invention discloses a crimping type IGBT device structure optimization design method, which comprises the following processing steps of selecting a design target based on a crimping type IGBT device to be optimized; based on the crimping type IGBT device, establishing a thermal coupling finite element analysis model M0, and further selecting a coupling temperature-displacement steady-state solver to solve the finite element analysis model M0; based on the position and the stress value of eachchip, establishing a stress balance coefficient response surface; forming an initial coefficient vector a (0) as an initial point, constructing an optimization model, and solving the optimization model to obtain an optimal coefficient vector a *; and constructing a silver sheet design scheme based on the optimal balance coefficient. Compared with the prior art, the structure optimization model established by the method can be solved on the basis of existing finite element analysis commercial software and a classical optimization algorithm, so that a tedious and complex programming process is avoided, and the method has good engineering usability.

Description

technical field [0001] The invention mainly relates to the technical field of structural design of high-power semiconductor devices, in particular to a method for optimizing the structural design of a pressure-connected IGBT device. Background technique [0002] The rapid development of voltage-flexible direct current transmission technology puts forward strict requirements on the capacity and reliability of power electronic devices in its core equipment. An insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is one of the most typical types of fully-controlled voltage-driven power semiconductor devices. Compared with the traditional soldered IGBT module, the press-fit IGBT device has the advantages of double-sided heat dissipation, easy series connection, high power density and failure short-circuit working mode, and is very suitable for high-voltage and high-power application scenarios such as power systems. Press-fit IGBT can be roughly divided in...

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Problems solved by technology

Secondly, the IGBT device contains a large number of sub-modules, resulting in a large number of design variables in the structural optimization model. When solving, it is necessary to repeatedly call the multi-field coupling simulation model, which involves the high-dimensional structural optimization of the time-consuming simulation model. Solving is extremely challenging in terms of efficiency and convergence

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