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Coaxial conductor structure, capacitor and manufacturing method thereof

A technology of coaxial conductors and manufacturing methods, which is applied in the direction of capacitors, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems that the metal-insulation-metal efficiency value cannot be further improved, so as to ensure the yield and performance, and improve Effect of Efficiency Value

Active Publication Date: 2022-02-15
POWERCHIP SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In other words, the efficiency value per unit area of ​​metal-insulator-metal (MIM) capacitors cannot be further improved

Method used

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  • Coaxial conductor structure, capacitor and manufacturing method thereof
  • Coaxial conductor structure, capacitor and manufacturing method thereof
  • Coaxial conductor structure, capacitor and manufacturing method thereof

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Embodiment Construction

[0066] Some embodiments are listed below and described in detail with the accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention. In addition, the drawings are for illustration purposes only and are not drawn to original scale. In order to facilitate understanding, the same elements in the following description will be described with the same symbols. In addition, terms such as "comprising", "including", and "having" used in the text are all open terms; that is, including but not limited to. Moreover, the directional terms mentioned in the text, such as: "up", "down", etc., are only used to refer to the directions of the drawings. Accordingly, the directional terms used are for the purpose of description, not limitation of the invention.

[0067] Figure 1A is a schematic perspective view of a coaxial conductor structure according to the first embodiment of the present invention.

[0068] Please refer to Figure 1A ,...

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Abstract

The invention discloses a coaxial conductor structure, a capacitor and a manufacturing method thereof, wherein the coaxial conductor structure includes an outer surface and an inner surface, and the axis center of the outer surface and the axis center of the inner surface are coaxial. There is also provided a capacitor, comprising the above-mentioned coaxial conductor structure as a first electrode, a second electrode and a dielectric layer. The second electrode is formed in the groove of the coaxial conductor structure. The dielectric layer is between the first electrode and the second electrode.

Description

technical field [0001] The invention relates to a conductor structure, a capacitor and a manufacturing method thereof, and in particular to a coaxial conductor structure, a capacitor and a manufacturing method thereof. Background technique [0002] The precision capacitors generally used in metal-oxide-semiconductor (CMOS) can be metal-insulator-metal (MIM) capacitors or polysilicon-insulator-polysilicon (PIP) capacitors. In today's semiconductor industry, higher performance capacitors are more commonly used. Metal-insulator-metal (MIM) capacitors are precision capacitors made of metal-oxide-semiconductor (CMOS). At present, in order to increase the unit area of ​​metal-insulator-metal (MIM) capacitors, there is a manufacturing process method for preparing a double-layer cylindrical structure by exposing and developing twice. [0003] However, due to the low precision of the second exposure manufacturing process in the above method, it is prone to the situation that the gap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64
CPCH01L28/40H01L28/60
Inventor 车行远杨绍佑姜文萍高静熙龚进安
Owner POWERCHIP SEMICON MFG CORP
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