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Bulk-acoustic wave resonator

A bulk acoustic wave resonator and hexagonal crystal technology, applied in electrical components, impedance networks, etc., can solve the problems of mechanical performance degradation, piezoelectric layer crystal orientation and performance degradation of resonators, etc.

Pending Publication Date: 2020-04-14
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, in the case where the top and bottom electrodes are formed using only aluminum (Al), mechanical properties may be deteriorated, and the crystal orientation of the piezoelectric layer and the performance of the resonator may be due to hillocks caused by electromigration or mechanical deformation. ) while deteriorating

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Embodiment Construction

[0064] The following detailed description is provided to assist the reader in gaining an overall understanding of the methods, devices and / or systems described herein. However, various alterations, modifications, and equivalents of the methods, apparatus, and / or systems described herein will be apparent upon understanding the disclosure of the present application. For example, the order of operations described herein are examples only, and are not limited to the order set forth herein, but, except for operations that must occur in a particular order, can be made that will become apparent after understanding the disclosure of this application. change. Furthermore, descriptions of features that are known in the art may be omitted for increased clarity and conciseness.

[0065] The features described herein may be implemented in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein have been provided merel...

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Abstract

A bulk-acoustic wave resonator is provided. The resonator includes: a substrate; a seed layer disposed on the substrate and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and thetop electrode includes a scandium (Sc)-containing aluminum alloy layer.

Description

[0001] This application claims Korean Patent Application No. 10-2018-0118730 filed with the Korean Intellectual Property Office on October 5, 2018 and Korean Patent Application No. 10-2018-0149571 filed with the Korean Intellectual Property Office on November 28, 2018 Benefit of Priority to Patent Application, the entire disclosure of said Korean Patent Application is hereby incorporated by reference for all purposes. technical field [0002] The following description relates to a bulk acoustic wave resonator. Background technique [0003] Recently, interest in fifth generation (5G) communication technology has increased, and technological developments have been made that can be implemented in candidate frequency bands for 5G communication. [0004] A frequency band achievable by a film bulk acoustic resonator (FBAR) is about 6 GHz or less. When the FBAR operates in the frequency band of 2GHz to 3GHz, an appropriate electrode thickness and an appropriate piezoelectric layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/05H03H9/13H03H9/17
CPCH03H9/02015H03H9/02047H03H9/0504H03H9/131H03H9/171H03H9/173H03H9/13H03H9/17
Inventor 李泰京孙晋淑庆济弘金成善申兰姬李华善
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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