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Method for determining monocrystalline silicon charging data, device thereof and equipment

A determination method and technology of single crystal silicon, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of poor accuracy and long time.

Inactive Publication Date: 2020-04-17
YINCHUAN LONGI SILICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art, it is necessary to manually weigh the weight of the single crystal silicon rod and the filter residue, and according to the weighing result, manually calculate the weight of the raw material and the weight of the dopant that need to be added when feeding, so that according to the weight of the obtained single crystal The feeding data of silicon, the feeding operation of single crystal silicon feeding, leads to the process of determining the weight of raw materials and dopant weight to be added in the feeding process, which takes a long time and has poor accuracy

Method used

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  • Method for determining monocrystalline silicon charging data, device thereof and equipment
  • Method for determining monocrystalline silicon charging data, device thereof and equipment
  • Method for determining monocrystalline silicon charging data, device thereof and equipment

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Embodiment 1

[0090] Reference figure 1 , figure 1 A step flow chart of a method for determining feed data for single crystal silicon in the first embodiment of the present invention is shown. The method may include the following steps:

[0091] Step 101: Obtain the process state of the single crystal furnace.

[0092] In this step, the single crystal furnace equipment can be used to obtain the process step status of the single crystal furnace, so that it can be determined whether the single crystal furnace can be charged according to the process step status of the single crystal furnace.

[0093] Specifically, in the Czochralski method for producing single crystal silicon rods, the raw materials are first loaded into the quartz crucible in the single crystal furnace, the furnace body is sealed, and protective gas is introduced, and the blocks are heated to 1400 It melts at about ℃, and the raw material is formed after the pre-loaded raw material in the quartz crucible is melted. After seeding, s...

Embodiment 2

[0106] See figure 2 , Shows a step flow chart of a method for determining feed data for single crystal silicon in the second embodiment of the present invention, and the method may include the following steps:

[0107] Step 201: Obtain the process state of the single crystal furnace.

[0108] For details of this step, refer to the above step 101, which will not be repeated here.

[0109] After step 201, step 202 or step 203 can be performed.

[0110] Step 202: In the case that the process step state is an abnormal state, and it is determined that an instruction to start the feeding operation sent by the single crystal furnace is received, the operating parameter data of the single crystal furnace is acquired.

[0111] In this step, if the process step status of the single crystal furnace obtained from the single crystal furnace equipment is abnormal, that is, an abnormal situation occurs during the operation of the single crystal furnace, and the single crystal furnace does not follow ...

Embodiment 3

[0210] Reference Figure 5 , Shows a step flow chart of an intelligent batching and feeding method in the third embodiment of the present invention, which is applied to a feeding system including a single crystal furnace, a device for determining feeding data of single crystal silicon, and a feeding device. The method may include the following step:

[0211] In step 301, the process state of the single crystal furnace is collected.

[0212] For details of this step, refer to the above step 101, which will not be repeated here.

[0213] Step 302, whether the single crystal furnace is in the step of unloading the silicon rod.

[0214] In this step, according to the single crystal furnace process step status collected by the single crystal furnace, it is judged whether the single crystal furnace is in the unloading process step of silicon rods. If yes, proceed to step 303; if not, proceed to step 306, and the feeding device does not Do any response.

[0215] Step 303, data collection of ...

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Abstract

The invention provides a method for determining charging data of monocrystalline silicon, a device thereof and equipment. The method comprises the following steps: acquiring a working step state of asingle crystal furnace; under the condition that the working step state is a silicon rod unloading working step, obtaining operation parameter data of the single crystal furnace; under the condition that the feeding operation is started according to the operation parameter data, obtaining the information of a crucible in the single crystal furnace and raw material information of raw materials needed by the single crystal furnace, and determining the feeding data according to the information of the crucible, the raw material information and the operation parameter data. According to the invention, when the working step state is the silicon rod unloading working step, the charging data can be determined through the operation parameter data of the single crystal furnace, the information of the crucible and the raw material information, so that the charging operation for preparing the monocrystalline silicon is faster and more accurate, the time for determining the charging data of the monocrystalline silicon is shortened, and the production efficiency of the monocrystalline silicon is improved.

Description

Technical field [0001] The present invention relates to the technical field of single crystal silicon, in particular to a method, device and equipment for determining feed data of single crystal silicon. Background technique [0002] With the continuous consumption of traditional energy and its negative impact on the environment, the role of crystalline silicon solar cells in changing the energy structure and alleviating environmental pressure has become increasingly prominent, and monocrystalline silicon is an important foundation for crystalline silicon solar cells. One of the materials has a broad market demand. [0003] In the prior art, single crystal silicon is often prepared by multi-loading crystal pulling technology. The specific process is: after seeding, shoulder setting, shoulder turning, equal diameter, and finishing operations, after completing the preparation of a single crystal silicon rod , By adding materials to the quartz crucible again to add raw materials and ...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/02C30B15/04C30B15/20
CPCC30B15/02C30B15/04C30B15/20C30B29/06
Inventor 李博一王慧智罗向玉冉瑞应金雪周宏坤陈龙杨东
Owner YINCHUAN LONGI SILICON MATERIALS