High temperature vacuum furnace and semiconductor processing equipment
A high-temperature vacuum and furnace technology, which is used in semiconductor/solid-state device manufacturing, crystal growth, post-processing details, etc., and can solve the problems of high disassembly and maintenance costs and complex structure.
Active Publication Date: 2021-04-09
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
[0003] In view of the shortcomings of the existing methods, this application proposes a high-temperature vacuum furnace and semiconductor processing equipment to solve the technical problems of high disassembly and maintenance costs and complex structures existing in the prior art
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[0018] The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.
[0019] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be ...
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Embodiments of the present application provide a high-temperature vacuum furnace and semiconductor processing equipment. The high-temperature vacuum furnace includes: a furnace body, a process tube, a heater assembly and an electrode assembly, the process tube is vertically arranged in the furnace body, and the opening of the process tube is located at the bottom of the furnace body, and the constant temperature zone in the process tube is set away from the opening; The heater assembly is located in the furnace body, and is sleeved on the outside of the process tube to correspond to the position of the constant temperature zone; one end of the electrode assembly is electrically connected to the heater assembly, and the other end passes through the top wall of the furnace body and extends to the furnace outside the body. The embodiment of the present application can make the structure of the furnace body simple and compact, so that the disassembly and assembly of the furnace body can be facilitated, and further the maintenance and use costs of the embodiment of the present application can be greatly increased. In addition, due to the long distance between the opening of the process tube and the constant temperature zone, the temperature can be quickly raised and the constant temperature zone of the process tube can be heated, thereby effectively improving the process performance and process efficiency of the wafer.
Description
technical field [0001] The present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a high-temperature vacuum furnace and semiconductor processing equipment. Background technique [0002] At present, the manufacturing of third-generation semiconductor silicon carbide (SiC) devices is an emerging industry with complex manufacturing processes, large capital investment, and high technical thresholds. High-temperature annealing process and high-temperature oxidation process are important processes of silicon carbide (SiC) semiconductor devices. The high-temperature oxidation process temperature is as high as 1300°C, and the high-temperature annealing process temperature is as high as 1700°C. Process temperature, chamber airtightness and cleanliness all have an important impact on the electrical performance of silicon carbide (SiC) devices. However, due to the high process temperature and high temperat...
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IPC IPC(8): C30B29/36C30B33/00C30B33/02H01L21/67
CPCC30B29/36C30B33/005C30B33/02H01L21/67098H01L21/67207
Inventor 陈志兵李旭刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD