Unlock instant, AI-driven research and patent intelligence for your innovation.

High-voltage level shift circuit and method for enhancing reliability

A level shift circuit, a technology of level shift, applied in the direction of logic circuit, logic circuit coupling/interface using field effect transistor, logic circuit connection/interface layout, etc. Solve the effect of wrong flip and avoid wrong flip

Active Publication Date: 2020-04-21
3PEAK INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] 5. Similarly, if the parasitic inductance of PCB, bonding wire, etc. is too large, HV_VSS / HV_VDD will generate high-frequency oscillation, and the high-speed rising / falling edge will also cause the level shift circuit to generate wrong output

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage level shift circuit and method for enhancing reliability
  • High-voltage level shift circuit and method for enhancing reliability
  • High-voltage level shift circuit and method for enhancing reliability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Figure 4 with Figure 5 A schematic topology diagram and a timing diagram of the level shifting circuit 100 are shown in . The level shifting circuit 100 includes a latch 110 including a second inverter 112 cross-coupled with a first inverter 111 . The first inverter 111 includes a PMOS transistor PM1 whose source is connected to a high power domain power node providing a high power voltage HV_VDD. The first inverter 111 also includes an NMOS transistor NM1 whose source is connected to the ground node HV_VSS of the latch 110 and whose drain is coupled to the drain of the PMOS transistor PM1.

[0043]Similarly, the second inverter 112 includes a PMOS transistor PM2 whose source is connected to a high power domain power node providing a high power voltage HV_VDD. The second inverter 112 also includes an NMOS transistor NM2 whose source is connected to the ground node HV_VSS of the latch 110 and whose drain is coupled to the drain of a PMOS transistor PM2.

[0044] Th...

Embodiment 2

[0063] The core part of the latch in this embodiment is the same as that in Embodiment 1, and will not be repeated here. In order to force the latch on the high-voltage side to be in the correct state and avoid interference on the rising and falling edges of HV_VSS, Embodiment 2 provides another implementation method, that is, regardless of the ON level, the latch is on the rising and falling edges of HV_VSS Can keep the original state.

[0064] combine Image 6 As shown, the level shift circuit 200 includes coupling circuits 211 and 212 .

[0065] The coupling circuit 211 includes a capacitor C1 and a resistor R1, and the capacitor C1 and the resistor R1 are connected in series between HV_VDD and ground. There are also 4 MOS transistors between HV_VDD and HV_VSS, including PM5, PM7, NM7 and NM10, where the source of PM5 is connected to HV_VDD, the drain of PM5 is connected to the source of PM7, and the drain of PM7 is connected to NM7. Drain, the source of NM7 is connected...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-voltage level shift circuit and method for enhancing reliability. The circuit level shifts a low voltage domain input signal into a high voltage domain output signal, and the high voltage level shift circuit includes a coupling circuit configured to respond to a rising edge and / or a falling edge of the high voltage domain signal and maintain a state of the high voltage domain output signal. According to the invention, a RC coupling circuit is used for generating pulse signals at the rising edge and the falling edge of the HV _ VSS / HV _ VDD; the state of the high-voltage end latch is kept, false flip of the latch is avoided, and the problem that false flip is caused when the change slope of HV _ VSS / HV _ VDD in a high-voltage circuit is very large is solved.

Description

technical field [0001] The invention relates to a level shift circuit, in particular to a high-voltage level shift circuit and method with enhanced reliability. Background technique [0002] Level shifting circuits have a wide range of applications, for example, in DC / DC, motor drivers, load switches and other circuits, level shifting circuits can control the on-off of high-side power transistors. [0003] to combine figure 1 with 2 As shown, the traditional level shift circuit is used in DC / DC and motor drive circuits, especially in the case of high voltage, there are reliability problems, that is, the latch state will be reversed by mistake, and the high and low logic states of the output signal OUT are consistent with the input signal ON Inconsistent. The source of this problem is: [0004] 1. In DC / DC and motor drive circuits, the voltage difference between HV_VDD and HV_VSS is fixed, but HV_VSS will quickly switch between 0V and a high voltage, and the slope may be ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0185
CPCH03K19/018557
Inventor 冯翰雪李冬超
Owner 3PEAK INC