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Pressure-assisted silver sintering device for power semiconductor chip

A power semiconductor and sintering device technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as chip or pad movement, silver sintering tooling deformation, etc., to avoid deformation and improve sintering packaging efficiency Effect

Active Publication Date: 2020-04-28
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem solved by the invention is: in the traditional heat treatment process of silver sintering, due to the difference between the thermal conductivity and the thermal expansion coefficient between the multi-layer metal positioning frames, the deformation of the silver sintering tool will be caused, resulting in the chip being damaged during the heat treatment process. or shims move

Method used

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  • Pressure-assisted silver sintering device for power semiconductor chip
  • Pressure-assisted silver sintering device for power semiconductor chip
  • Pressure-assisted silver sintering device for power semiconductor chip

Examples

Experimental program
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Effect test

Embodiment 1

[0051] This embodiment relates to a pressure-assisted silver sintering device for power semiconductor chips. Specifically, the device is used to package such as figure 1 The new press-fit module chip subunit shown. The chip subunit mainly includes an upper pad 1 and a lower pad 3 attached with a nano-silver film, and a chip 2 .

[0052] The pressure-assisted silver sintering device of this embodiment mainly includes nano-silver film transfer tooling and silver sintering tooling. specifically:

[0053] Nano-silver film transfer tooling is used for the nano-silver film transfer process, that is, transferring the nano-silver film to pads or chips, so as to make pads or chips with nano-silver films attached to the silver sintering tooling. Taking the pad nano-silver film transfer process as an example, the tooling attaches the nano-silver film to the pad to obtain a pad with the nano-silver film attached. The positioning frame of the nano-silver film transfer tool is provided ...

Embodiment 2

[0057] This embodiment relates to the nano-silver film transfer tool used in the pressure-assisted silver sintering device for power semiconductor chips in the first embodiment. Figure 2 to Figure 6 A cross-sectional view of the nano-silver film transfer tooling and a top view of the positioning frame are shown. Such as figure 2 As shown, the nano-silver film transfer tooling used in the pressure-assisted silver sintering device for power semiconductor chips mainly includes the nano-silver film transfer tooling substrate 4, the silver film transfer gasket (chip) positioning frame 5a, 5b and the nano-silver film transfer tooling. Tooling connection structure.

[0058] The nano-silver film transfer tool is used to attach the nano-silver film 10 to the pad to be transferred to the silver film. specifically, image 3 The illustrated silver nano film transfer tool substrate 4 is provided with a nano silver film groove 12 for accommodating the nano silver film 10 and a pluralit...

Embodiment 3

[0065] This embodiment relates to the silver sintering tool used in the pressure-assisted silver sintering device for power semiconductor chips in the first embodiment. Figure 6 to Figure 12 A cross-sectional view of the double-sided silver sintering tool and a top view of the constituent elements are shown. Such as Figure 6 As shown, the double-sided silver sintering tooling used in the pressure-assisted silver sintering device for power semiconductor chips mainly includes a silver sintering tooling substrate 15, a lower gasket positioning frame 16, a chip positioning frame 17, an upper gasket positioning frame 18, and a baffle 19 and silver sintered tooling connection structure.

[0066] The silver sintering tool is used for silver sintering the gasket and the chip with the nano-silver film attached. specifically,

[0067] Figure 7 The shown silver sintered tooling substrate 15 is provided with a plurality of silver sintered tooling substrate positioning holes 26 .

...

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Abstract

The invention discloses a pressure-assisted silver sintering device for a power semiconductor chip. The pressure-assisted silver sintering device comprises a nano-silver film transfer tool and a silver sintering tool. The nano-silver film transfer tool is used for attaching a nano-silver film to a gasket; and a first pressure release structure used for releasing internal stress generated by the tool due to uneven heating in a nano-silver film transfer process is arranged on the nano-silver film transfer tool. The silver sintering tool is used for carrying out silver sintering on the gasket attached with the nano-silver film and a chip; and a second pressure release structure used for releasing internal stress generated by uneven heating of the tool in a silver sintering packaging technological process is arranged on the silver sintering tool. Due to the fact that the pressure release structures are arranged in the nano-silver film transfer tool and the silver sintering tool, the deformation of metal elements in the tools in the heat treatment process of chip silver sintering and packaging can be avoided, and therefore, the sintering and packaging efficiency of the chip is improved.

Description

technical field [0001] The invention relates to the technical field of silver sintering, in particular to a pressure-assisted silver sintering tooling for power semiconductor chips. Background technique [0002] In the existing silver sintering packaging process, when the chip area is greater than 25mm 2 At the same time, the pressure-assisted silver sintering process is often used, and the nano-silver transfer film is often used to achieve rapid sintering of chips and pads. The above process mainly includes the transfer of nano-silver film to the chip or spacer, the alignment between the transferred film chip (or spacer) and the spacer (or chip), and the sintering of the chip and the spacer by external pressure at high temperature. One. [0003] The above process needs to be realized with the help of specific tooling. The role of the tooling is mainly reflected in two aspects. One is to apply the pressure required for sintering between the chip and the pad; the other is t...

Claims

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Application Information

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IPC IPC(8): H01L21/603
CPCH01L24/77H01L2224/7725H01L2224/773H01L2224/77703
Inventor 王亚飞王彦刚戴小平
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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