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A kind of bulk structure gaas photoconductive switch based on graphene interface layer and its preparation process

A technology of photoconductive switch and graphene layer, applied in the direction of sustainable manufacturing/processing, semiconductor device, final product manufacturing, etc., can solve the problems of easy burnout, short life of switching devices, uneven heat dissipation, etc., and achieve improved breakdown voltage , good heat dissipation performance, clear process effect

Active Publication Date: 2021-09-07
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a bulk structure GaAs photoconductive switch based on a graphene interface layer and its preparation process. At present, most photoconductive switches are produced around the principle of gallium arsenide and multi-layer metal forming ohmic contacts. However, the switching device is faced with short life, uneven heat dissipation, and easy burnout. The present invention transfers high-quality graphene to the target substrate and then coats the surface with metal to form a composite of gallium arsenide-graphene-metal. structure, which has a great effect on the heat dissipation and life of the device

Method used

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  • A kind of bulk structure gaas photoconductive switch based on graphene interface layer and its preparation process
  • A kind of bulk structure gaas photoconductive switch based on graphene interface layer and its preparation process
  • A kind of bulk structure gaas photoconductive switch based on graphene interface layer and its preparation process

Examples

Experimental program
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Effect test

Embodiment 1

[0089] Select a semi-insulating gallium arsenide double-polished wafer with a crystal orientation of four inches, with a thickness of 600 μm, and use acetone, sulfuric acid and other processes to clean the surface of the gallium arsenide to remove surface impurities. The schematic diagram of the device structure is as Figure 1 ~ Figure 2 as shown,

[0090] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0091] On a Cu foil with a thickness of 25 μm, graphene is grown by CVD, and the graphene is transferred to a semi-insulating GaAs surface by a pulling method to obtain a first composite structure.

[0092] 2) Graphicalize the first composite structure:

[0093] First photolithography (front side):

[0094] (1) Apply photoresist AZ-5214 (2) Uniform glue (3) Pre-baking (4) Exposure (5) Development (6) Post-baking (7) UVO to remove residual glue;

[0095] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, ...

Embodiment 2

[0107] Select a four-inch gallium arsenide double-polished wafer with crystal orientation , resistivity ≥ 10 Ωcm, thickness 600 μm, use acetone, sulfuric acid and other processes to clean the surface of gallium arsenide to remove surface impurities.

[0108] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0109] On a Cu foil with a thickness of 25 μm, graphene is grown by CVD, and the graphene is transferred to a semi-insulating GaAs surface by a pulling method to obtain a first composite structure.

[0110] 2) Graphicalize the first composite structure:

[0111] First photolithography (front side):

[0112] (1) Apply photoresist AZ-5214 (2) Uniform glue (3) Pre-baking (4) Exposure (5) Development (6) Post-baking (7) UVO to remove residual glue;

[0113] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal is 283.5nm; ...

Embodiment 3

[0125] Select a four-inch gallium arsenide double-polished wafer with crystal orientation , resistivity ≥ 10 Ωcm, thickness 600 μm, use acetone, sulfuric acid and other processes to clean the surface of gallium arsenide to remove surface impurities.

[0126] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0127] On a Cu foil with a thickness of 25 μm, graphene is grown by CVD, and the graphene is transferred to a semi-insulating GaAs surface by a pulling method to obtain a first composite structure.

[0128] 2) Graphicalize the first composite structure:

[0129] First photolithography (front side):

[0130] (1) Apply photoresist AZ-5214 (2) Uniform glue (3) Pre-baking (4) Exposure (5) Development (6) Post-baking (7) UVO to remove residual glue;

[0131] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal is 283.5nm; ...

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Abstract

The invention discloses a bulk structure GaAs photoconductive switch based on a graphene interface layer and its preparation process. The cathode contact electrode is arranged on the lower surface of the GaAs substrate, the anode contact electrode is arranged on the upper surface of the GaAs substrate, and the anode contact electrode is connected to the GaAs substrate. A graphene layer is arranged between the GaAs substrates, the external electrode is arranged on the upper surface of the anode contact electrode, the light receiving hole penetrates the external electrode and the anode contact electrode, the upper surface of the GaAs substrate is also covered with a passivation layer, and the anode contact electrode is from bottom to top The sequence is Ni layer, Ge layer, Au layer, Ni layer and Au layer. At present, most photoconductive switches are manufactured around the principle of forming ohmic contacts between gallium arsenide and multi-layer metals, but the switching devices are faced with short life, uneven heat dissipation, and easy burnout. The invention transfers high-quality graphene On the target substrate, metal is plated on the surface to form a composite structure of gallium arsenide-graphene-metal, which has a great effect on the heat dissipation and life of the device.

Description

technical field [0001] The invention relates to the technical field of a gallium arsenide photoconductive switch, in particular to a bulk structure GaAs photoconductive switch based on a graphene interface layer and a preparation process thereof. Background technique [0002] Gallium arsenide photoconductive switch has many advantages, such as simple structure, fast response speed, high voltage resistance, small trigger jitter, high switching precision, and can be used for high switching precision, THz technology, high-power optical communication and high-noise environment. Electronics and transient electromagnetic wave technology have broad application prospects, and they also have important applications in fields such as weapon ignition, radar communication, and environmental monitoring, and photoconductive switches are gradually showing important applications in other fields such as biology and medicine. [0003] However, traditional gallium arsenide photoconductive switc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/024H01L31/108H01L31/18
CPCH01L31/022408H01L31/024H01L31/108H01L31/184Y02P70/50
Inventor 胡龙李昕崔宏旺朱莉刘康孙岳
Owner XI AN JIAOTONG UNIV
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