Bragg reflector vertical cavity surface emitting semiconductor laser distributed on asymmetric annular structure

Abstract

The invention discloses a Bragg reflector vertical cavity surface emitting semiconductor laser distributed on an asymmetric annular structure, and belongs to the technical field of semiconductor lasers. The Bragg reflector vertical cavity surface emitting semiconductor laser is characterized in that an ohmic contact layer, an upper distributed Bragg reflector and an active gain region are cylindrical entities; the middle part of the Bragg reflector vertical cavity surface emitting semiconductor laser is a flush-top eccentric high-resistance region; the flush-top eccentric high-resistance region is approximately cylindrical; the top surface of the flush-top eccentric high-resistance region is flush with the top surface of the ohmic contact layer, the bottom surface of the flush-top eccentric high-resistance region is in contact with the inner mirror surface of the lower distributed Bragg reflector, the vertical axis of the flush-top eccentric high-resistance region is parallel to the main axis of the device, and the eccentric distance delta between the vertical axis of the flush-top eccentric high-resistance region and the main axis of the device is 10-20 microns; and the shaping layer is located on the top surface of the flush eccentric high-resistance region, the shape and the radial dimension of the shaping layer are the same as those of the top surface of the flush eccentrichigh-resistance region, and the thickness and the material of the shaping layer are the same as those of the upper electrode. The fundamental mode in the transverse mode of the hollow laser beam canbe removed, and the beam quality is improved.

Description

technical field [0001] The invention relates to a semiconductor laser with Bragg reflectors distributed on an asymmetric ring structure and a vertical cavity surface emitting semiconductor laser. The high-resistance area is arranged eccentrically, which can remove the fundamental mode in the transverse mode of a hollow laser beam and improve the beam quality, and belongs to the technical field of semiconductor lasers. Background technique [0002] A Chinese invention patent with the patent number ZL201510113902.0 provides a technical solution named "Vertical Cavity Surface Emitting Semiconductor Laser with Distributed Bragg Reflectors on Ring Structure", such as figure 1 As shown, the vertical cavity surface-emitting semiconductor laser with distributed Bragg reflectors on the ring structure includes an upper electrode 1, an ohmic contact layer 2, an upper distributed Bragg reflector 3, an oxide confinement layer 4, and an active gain region from top to bottom. 5. The lower ...

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