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Band-gap reference voltage source quick starting circuit

A technology of reference voltage source and quick start, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., and can solve the problems of proportional amplification, damage, and high output of booster circuits, so as to eliminate overshoot, improve stability, and avoid The effect of device overvoltage

Active Publication Date: 2020-05-12
PUYA SEMICON SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The output of the subsequent connected boost circuit (pump) is generally amplified in proportion to the Vref voltage; therefore, the overshoot voltage output by the main circuit of the bandgap reference will further cause the output of the boost circuit to be too high, so that it exceeds the BV of the MOS tube Voltage (Breakdown Voltage; insulation breakdown voltage) and damage

Method used

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  • Band-gap reference voltage source quick starting circuit
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  • Band-gap reference voltage source quick starting circuit

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Embodiment Construction

[0023] The present invention provides a bandgap reference voltage source quick start circuit, which adds a current bias circuit to precisely control the start reference voltage source (BGR). Such as figure 2 As shown, the band gap reference circuit provided by the present invention includes a band gap reference main circuit and a band gap reference starting circuit.

[0024] The above-mentioned bandgap reference main circuit further includes: PMOS transistors PM3, PM4, and PM5, operational amplifiers, resistors R0, R1, R2, and R3, and transistors Q1 and Q2.

[0025] Among them, the negative input terminal VINN of the operational amplifier is connected to the emitter of the transistor Q1, and also connected to one end of the resistor R1; the other end of the resistor R1 is grounded, and the base and collector of the transistor Q1 are connected and grounded. The positive input terminal VINP of the operational amplifier is connected to one end of the resistor R2, and is also connecte...

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PUM

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Abstract

The invention relates to a band-gap reference voltage source quick starting circuit which comprises PMOS (P-channel Metal Oxide Semiconductor) tubes PM1 and PM2, an NMOS (N-channel Metal Oxide Semiconductor) tube NM1, a depletion type NMOS tube NM2 and a current source, grid electrodes of the tube NM1 and the tube NM2 are connected with Ponrst signals; when the Ponrst signal is in a high-level stage, the Ponrst signal is in a low-level stage; the tube NM1 and the tube NM2 are opened; the current source current Ibias generates a bias voltage Pbias _ set at a node corresponding to the drain electrode of the tube NM1 through the tube PM1, so that the voltage of a Pbias signal corresponding to the output end of the operational amplifier is equal to the bias voltage Pbias _ set. The voltage reference source is started through the bias current source, the voltage overshoot phenomenon can be eliminated, and the stability of the circuit is improved.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor circuits, and particularly relates to a band gap reference voltage source quick start circuit. Background technique [0002] The band gap reference circuit includes a band gap reference main circuit and a band gap reference starting circuit. Such as figure 1 As shown, the main circuit of the band gap reference mainly includes: PMOS tubes PM3, PM4, and PM5, operational amplifiers, resistors R0, R1, R2, and R3, and transistors Q1 and Q2. Among them, the negative input terminal VINN of the operational amplifier is connected to the emitter of the transistor Q1, and also connected to one end of the resistor R1; the other end of the resistor R1 is grounded, and the base and collector of the transistor Q1 are connected and grounded. The positive input terminal VINP of the operational amplifier is connected to one end of the resistor R2, and is also connected to the emitter of the transistor Q2 through ...

Claims

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Application Information

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IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 李兆桂陈涛
Owner PUYA SEMICON SHANGHAI CO LTD
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