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A coating and silicon film technology, which is applied in the field of coating methods and equipment, can solve the problems of slag and defects in the coating process, and achieve the effect of solving defects
Inactive Publication Date: 2020-05-19
东莞市微科光电科技有限公司
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[0012] One object of the present invention is to provide a coating method and equipment, which
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Embodiment 1
[0046] This embodiment provides a coating device, which is suitable for the application scenario of coating the object to be coated into an optical filter, and can solve the problem that the traditional coating process is easy to cause defects due to dross.
[0047] see figure 1 , in this embodiment, the coating equipment includes a target chamber 1 , an ion source chamber 2 and a transplanting mechanism 3 .
[0048] The target chamber 1 is provided with an argon ion plasma beam source and a fixing mechanism for fixing the target material, and is used to bombard the target material with an argon ion plasma beam in an inert environment to form a first silicon film coating on the surface of the object to be coated . The ion source chamber 2 is provided with electrodes for ionizing the first silicon film coating in a hydrogen-rich environment to convert the first silicon film coating into a hydrogenated silicon coating. The transplanting mechanism 3 is provided with a fixed sta...
Embodiment 2
[0053]This embodiment provides a coating method, which is executed by the coating device provided in Embodiment 1, and has the same functions and beneficial effects.
[0054] see figure 2 , the coating method includes:
[0055] S201: Bombarding the target with an argon ion plasma beam in an inert environment to form a first silicon film coating on the surface of the object to be coated.
[0056] Preferably, the inert gas is argon, and the target material is high-purity single crystal silicon or high-purity polycrystalline silicon.
[0057] Specifically, the target is put into the target chamber first, and then an inert gas is introduced into the target chamber. When the target chamber is filled with the inert gas, the air inlet of the target chamber is closed, preheated, and the argon ion plasma beam is bombarded. Coating the first silicon film coating layer.
[0058] S202: After the coating of the first silicon film is finished, the transplanting mechanism moves the piece...
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Abstract
The invention relates to the technical field of sputtering film forming, and particularly discloses a film coating method and facility. The method comprises the steps that argon ion plasma bombardmentis conducted on a target material in the inertia environment, and accordingly a first silicon film clad layer is formed on the surface of a to-be-coated piece; ionization is conducted on the first silicon film clad layer in the hydrogen-rich environment, and accordingly the first silicon film clad layer is converted into a silane clad layer; argon ion plasma beam bombardment is conducted on the target material in the inertia environment, and accordingly a second silicon film clad layer is formed on the surface of the silane clad layer; and ionization is conducted on the second silicon film clad layer in the hydrogen-rich environment, and accordingly the second silicon film clad layer is converted into a silicon dioxide clad layer. The film coating method and facility can solve the problemthat according to a traditional film coating technology, poorness is likely to be caused due to slag falling.
Description
technical field [0001] The invention relates to the technical field of sputtering film formation, in particular to a film coating method and equipment. Background technique [0002] In order to have properties such as infrared cutoff and high transmittance, it is very common to coat the glass of the mobile phone lens to be coated. RF sputtering is one of the common coating processes, the steps are as follows: [0003] Put the target material (usually high-purity single crystal silicon or high-purity polycrystalline silicon containing aluminum) in the target material chamber; [0004] ① Put the parts to be coated into the target chamber; [0005] ② Inject hydrogen or a mixed gas of oxygen and argon into the target chamber; [0006] ③ Bombard the target with argon ion plasma beam in the target chamber, keep the temperature at a certain temperature (mainly to ensure the temperature of the substrate surface), silicon ions react with hydrogen to form silicon hydride, and after...
Claims
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