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A bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and its preparation method and application

A molybdenum disulfide, composite material technology, applied in chemical instruments and methods, physical/chemical process catalysts, special compound water treatment, etc., can solve problems such as low photocatalytic efficiency and weak surface adsorption capacity

Active Publication Date: 2021-05-28
QILU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the fast recombination of photogenerated electron-hole pairs and weak surface adsorption ability make Bi 2 WO 6 The photocatalytic efficiency is low

Method used

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  • A bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and its preparation method and application
  • A bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and its preparation method and application
  • A bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] (1) Spherical Bi 2 WO 6 preparation of

[0038] In spherical Bi 2 WO 6 In the synthesis of the precursor, solution A and solution B were prepared. Solution A, 2mmol Bi(NO 3 ) 3 ·5H 2 O and 4g of PVP K30 were added to a mixed solution of 50mL of water, absolute ethanol, and glacial acetic acid (3:1:1 by volume), and stirred at room temperature until the solution was clear. Solution B, in 20mL H 2 Add 1mmol Na to O 2 WO 4 2H 2 O, ultrasound for 30 minutes. Then add solution B dropwise to solution A, stir for 60 minutes to obtain a uniform suspension, transfer it to a 100mL polytetrafluoroethylene-lined autoclave, react with solvent heat at 180°C for 18 hours, and cool to room temperature naturally , through centrifugation, washing, drying, and grinding, the pale yellow Bi 2 WO 6 powder.

[0039] (2) Spherical Bi 2 WO 6 / Bi 2 S 3 / MoS 2 Preparation of heterojunction ternary composites

[0040] 200mg Bi 2 WO 6 Disperse the powder into 40mL water, add ...

Embodiment 2

[0042] (1) Spherical Bi 2 WO 6 preparation of

[0043] In spherical Bi 2 WO 6 In the synthesis of the precursor, solution A and solution B were prepared. Solution A, 2mmol Bi(NO 3 ) 3 ·5H 2 O and 4g of PVP K30 were added to a mixed solution of 50mL of water, absolute ethanol, and glacial acetic acid (3:1:1 by volume), and stirred at room temperature until the solution was clear. Solution B, in 20mL H 2 Add 1mmol Na to O 2 WO 4 2H 2 O, ultrasound for 30 minutes. Then add solution B dropwise to solution A, stir for 60 minutes to obtain a uniform suspension, transfer it to a 100mL polytetrafluoroethylene-lined autoclave, react with solvent heat at 180°C for 18 hours, and cool to room temperature naturally , through centrifugation, washing, drying, and grinding, the pale yellow Bi 2 WO 6 powder.

[0044] (2) Spherical Bi 2 WO 6 / Bi 2 S 3 / MoS 2 Preparation of heterojunction ternary composites

[0045] 200mg Bi 2 WO 6 Disperse the powder into 40mL water, add ...

Embodiment 3

[0047] (1) Spherical Bi 2 WO 6 preparation of

[0048] In spherical Bi 2 WO 6 In the synthesis of the precursor, solution A and solution B were prepared. Solution A, 2mmol Bi(NO 3 ) 3 ·5H 2 O and 4g of PVP K30 were added to a mixed solution of 50mL of water, absolute ethanol, and glacial acetic acid (3:1:1 by volume), and stirred at room temperature until the solution was clear. Solution B, in 20mL H 2 Add 1mmol Na to O 2 WO 4 2H 2 O, ultrasound for 30 minutes. Then add solution B dropwise to solution A, stir for 60 minutes to obtain a uniform suspension, transfer it to a 100mL polytetrafluoroethylene-lined autoclave, react with solvent heat at 180°C for 18 hours, and cool to room temperature naturally , through centrifugation, washing, drying, and grinding, the pale yellow Bi 2 WO 6 powder.

[0049] (2) Spherical Bi 2 WO 6 / Bi 2 S 3 / MoS 2 Preparation of heterojunction ternary composites

[0050] 200mg Bi 2 WO 6 Disperse the powder into 40mL water, add ...

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Abstract

The invention relates to a bismuth tungstate / bismuth sulfide / molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. Composed of ordered layers of bismuth tungstate / bismuth sulfide / molybdenum disulfide, Bi 2 WO 6 Orthorhombic crystal system, Bi 2 S 3 It is a P-type semiconductor, located on the (130) crystal plane, MoS 2 It is a layered transition metal sulfide, located on the (002) crystal plane. The composite material has a spherical structure as a whole, the surface is not smooth, and a layer of nanosheets is uniformly grown on the outer layer, with an average particle size of 2.4-2.6 μm. Spherical Bi prepared by the present invention 2 WO 6 / Bi 2 S 3 / MoS 2 The heterojunction ternary composite has good adsorption and visible-light catalytic reduction ability for Cr(VI).

Description

technical field [0001] The invention belongs to the technical field of synthesis of photocatalytic materials, and in particular relates to a bismuth tungstate / bismuth sulfide / molybdenum disulfide heterojunction ternary composite material and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] At present, heavy metal ion pollution is becoming more and more serious. Different from other pollutants, heavy metal pollution can be transmitted through the food chain, and it is difficult to degrade and easy to accumulate. It is one of the major problems in the world's environmental governance. Among them, Cr(VI) pollution in leather tanning, e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/051B01J35/02B01J35/08C02F1/30C02F1/70C02F101/22
CPCB01J27/051B01J35/004B01J35/023B01J35/08C02F1/30C02F1/70C02F2305/10C02F2101/22C04B35/495C04B35/547C04B2235/326C04B2235/446C04B2235/528C04B2235/5436C04B2235/3298C04B2235/3256C04B2235/80C02F1/281C02F1/705B01J35/002B01J23/31C01G41/00C01P2004/32C04B35/62635
Inventor 周国伟任静宫庆华孙彬孙学凤
Owner QILU UNIV OF TECH
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