A double-sided heat dissipation full-bridge power module based on gan device

Abstract

The invention discloses a double-sided heat dissipation full-bridge power module based on a GaN device. The double-sided ceramic substrate is used to dissipate heat and form a full-bridge circuit. The full-bridge circuit is composed of two half-bridge circuits; each half-bridge circuit contains two GaN die and a power bus drive capacitor C bus ; Power bus drive capacitor C bus Connect one end of V bus , the other end is connected to GND, and the two GaN dies are respectively connected to corresponding driver chips, and each driver chip is provided with a driver bus decoupling capacitor C dri . The invention has a compact and light structure, can effectively increase the power density, can greatly improve the heat dissipation performance of the GaN power module, and at the same time reduce the parasitic inductance in the GaN full-bridge power module.

Description

technical field [0001] The invention belongs to the technical field of power electronic power module design, and in particular relates to a GaN device-based double-sided heat dissipation full-bridge power module. Background technique [0002] With the development of science and technology, the performance of traditional silicon-based (Si) power devices has gradually reached its theoretical upper limit, which is increasingly unable to meet the application requirements of power converters. Wide bandgap semiconductor gallium nitride (GaN) power devices have the characteristics of low on-resistance, low parasitic capacitance, and high switching speed, which can effectively improve the efficiency and operating frequency of power converters, significantly reduce the volume of power converters, and increase power Density, in line with the development needs of power converters for high efficiency, light weight, high power density, etc., has a wide range of application prospects. ...

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Problems solved by technology

[0005] 1. Single-sided PCB method. This method can effectively reduce the key parasitic parameters in the circuit by optimizing the circuit layout. However, due to the extremely low thermal conductivity of the PCB insulating material, the heat dissipation problem of GaN becomes more serious;

[0006] 2. The single-sided DBC ceramic substrate method, which uses the good heat dissipation performance of the ceramic substrate as a heat dissipation path, can effectively improve the heat dissipation performance, but only includes one heat dissipation path, and the GaN device used includes the thermal resistance of the package, and the heat dissipation performance is affected by the heat dissipation of the package. Resistance is limited, and at the same time, due to the poor wiring accuracy of the DBC ceramic substrate, the parasitic parameters in the circuit increase;

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