A super-junction vdmos device with improved dynamic characteristics
A dynamic characteristic and device technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of difficult adjustment of switching loss and EMI noise, increase of drain voltage and current oscillation, and achieve bidirectional switching EMI noise Effects of optimization, reduction of switching power consumption, and faster switching time
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[0022] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0023] Such as figure 1 As shown, a super-junction VDMOS device with improved dynamic characteristics provided by the first embodiment of the present invention includes a metallized drain 1, a heavily doped semiconductor substrate 2 of the first conductivity type located on the metallized drain 1, A lightly doped first conductivity type semiconductor column 3 located on the first conductivity type semiconductor substrate 2; a second semiconductor column located on the first conductivity type semiconductor substrate 2 and on both sides of the first conductivity type semiconductor column 3 conductivity type semiconductor pillar 4;
[0024] The top of the second conductivity type semiconductor column 4 and the top of ...
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