Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

METHOD FOR MANUFACTURING [mu]LED PIXEL STRUCTURE BY COMPLETELY REMOVING INTERFERENCE OF DRIVING PMOS THRESHOLD VOLTAGE

A threshold voltage, complete elimination technology, applied in instruments, static indicators, etc., can solve the problems of difficult to achieve black, difficult display development and commercialization, interfere with the quality of display devices, etc., achieve low power, improve display efficiency and performance. Effect

Inactive Publication Date: 2020-06-05
SILICONINSIDE
View PDF10 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Because if nothing is done, there will be ±15% spread in the gray scale of μLED due to the threshold voltage of driving PMOS, which is a big problem for the development and commercialization of displays using μLED
[0009] In addition, in the μLED pixel structure, the corresponding transistor is not completely turned off but slightly turned on due to the threshold voltage of the driving PMOS.
For example, there is a problem that it is difficult to achieve perfect black (Black) using a μLED pixel structure, and the final disadvantage is that it interferes with the quality of a display device using a μLED

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • METHOD FOR MANUFACTURING [mu]LED PIXEL STRUCTURE BY COMPLETELY REMOVING INTERFERENCE OF DRIVING PMOS THRESHOLD VOLTAGE
  • METHOD FOR MANUFACTURING [mu]LED PIXEL STRUCTURE BY COMPLETELY REMOVING INTERFERENCE OF DRIVING PMOS THRESHOLD VOLTAGE
  • METHOD FOR MANUFACTURING [mu]LED PIXEL STRUCTURE BY COMPLETELY REMOVING INTERFERENCE OF DRIVING PMOS THRESHOLD VOLTAGE

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] According to the present invention, the method for controlling the pixel structure of the μLED for completely eliminating the interference of the threshold voltage of the driving PMOS includes: by turning on the pre-charged NMOS 10 according to the pre-signal (PRE), thereby maintaining the gate bias (VBIAS) of the driving PMOS at 0V The pre-charge (Pre-Charge) step; when the source driver (Source Driver) provides data to the μLED pixel, after the pre-charge NMOS and the enable-off PMOS are turned off according to the enable signal (EN), turn on and enable The PMOS can be turned on, so that the gate bias (VBIAS) of the driving PMOS becomes the data enabling (Data Enable) step of [data value-threshold voltage (VTH) of the driving PMOS]; The enable signal (EN) and the emission signal (EMM) of the non-overlap (non-overlap) interval are used to turn on the enable off PMOS, and after turning off the enable on PMOS, the conduction is turned off state of the emitting NMOS and e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method for controlling a [mu]LED pixel structure and, more specifically, to a method for controlling a [mu]LED pixel structure, the method allowing to further facilitate control of a greyscale of the [mu]LED by completely removing interference of a driving PMOS threshold voltage in determining a magnitude of a current flowing to the [mu]LED.

Description

technical field [0001] The present invention relates to a method of controlling a μLED pixel structure, and more particularly, the present invention relates to a method of controlling a μLED pixel structure characterized by completely eliminating the drive PMOS threshold when determining the magnitude of the current flowing to the μLED The interference of the voltage makes it easier to control the gray scale of the μLED. Background technique [0002] Recently, μLED (Micro-LED) has attracted people's attention as the next-generation display μLED (Micro-LED) after LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode). [0003] The μLED generally refers to an ultra-small LED with a chip size of only 5 to 10 μm, and the LED chip itself can be used as a pixel, so it is characterized in that it can overcome problems such as bending or cracking that hinder the realization of LEDs. [0004] Although the μLED is similar to quantum dots in that it uses ultra-small part...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/32
CPCG09G3/32G09G2310/0248G09G2310/027G09G2320/0238G09G2300/043
Inventor 金镇赫金钟善
Owner SILICONINSIDE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com