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Metal short circuit failure location structure and method

A short-circuit failure and positioning structure technology, which is applied in the direction of short-circuit testing, circuits, semiconductor/solid-state device components, etc., can solve the problems that the positioning analysis method cannot accurately determine the failure position and the short-circuit position.

Active Publication Date: 2021-06-15
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, as the semiconductor process technology becomes more and more advanced, the stability of the back-stage process is getting stronger and stronger, and the leakage of many metal short-circuit failure samples has become very small, such as reaching the nA level, and the failure cannot be accurately determined by using the existing positioning analysis methods. Location
In the existing method, although OBIRCH can highlight a line, it still cannot accurately locate the short circuit

Method used

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  • Metal short circuit failure location structure and method
  • Metal short circuit failure location structure and method
  • Metal short circuit failure location structure and method

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no. 1 example

[0070] Metal short-circuit failure location structure of the first embodiment of the present invention:

[0071] Such as Figure 4 As shown, it is a schematic diagram of the metal short-circuit failure location structure of the first embodiment of the present invention; the metal short-circuit failure location structure of the first embodiment of the present invention includes: a first metal winding structure connected by a plurality of metal wire segments and a plurality of metal wire segments A second metal winding structure formed by connecting metal wire segments.

[0072] In the short-circuit failure detection area, the first metal winding structure includes a plurality of parallel first metal wire segments 1, and each of the first metal wire segments 1 is connected by a corresponding second metal wire segment 2 to form an end-to-end serpentine structure The second metal winding structure includes a plurality of third metal wire segments 4, each of the third metal wire s...

no. 3 example

[0102] The metal short circuit failure location structure of the third embodiment of the present invention:

[0103] The difference between the metal short-circuit failure location structure of the third embodiment of the present invention and the metal short-circuit failure location structure of the first embodiment of the present invention is:

[0104] Such as Figure 6 As shown, it is a schematic diagram of the metal short-circuit failure location structure according to the third embodiment of the present invention; in the short-circuit failure detection area, the third metal wire segments 4 of the second metal winding structure are numbered according to the order of arrangement, wherein The first sides of the odd-numbered third metal line segments 4 are all connected to the second connecting line segment 5b and the second sides of the even-numbered third metal line segments 4 are connected to the third connecting line segment 5c to form a double comb structure .

[0105]...

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Abstract

The invention discloses a metal short-circuit failure location structure, which includes: first and second metal winding structures; in the short-circuit failure detection area, the first metal winding structure includes a plurality of parallel first wires connected in a serpentine structure. The metal wire segment, the second metal wire winding structure includes a plurality of third metal wire segments that are electrically connected together, and each third metal wire segment is adjacent to the corresponding first metal wire segment; the end-to-end connection of the first metal wire segment is through a higher-level metal layer The composition of the second metal line segment is realized. The second metal line segment is retained during the electrical confirmation process and removed during the failure location process to disconnect the first metal line segments, and the first metal line segment that is short-circuited with the second metal winding structure is located by using passive voltage contrast contrast. The invention also discloses a metal short circuit failure location method. The invention can completely locate the failure position of the metal short circuit and realize the positioning of the nA level metal short circuit failure position.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a metal short circuit failure positioning structure. The invention also relates to a metal short circuit failure location method. Background technique [0002] In the semiconductor process, it is divided into two parts: the front-end device (device) and the back-end metal interconnection layer. The metal interconnection layer in the back-end acts as a wire to lead out the front-end devices. In order to detect the technical problems of the back-end metal interconnection layer in advance, some test structures are designed to collect corresponding electrical parameters. According to the results of these parameters, the problems existing in the online process can be monitored, and the existing problems can be controlled and solved in advance to ensure that the online Process stability and promote research and development progress. [0003] The common st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66G01R31/26G01R31/52G01R19/15
CPCG01R19/15G01R31/2642H01L22/12H01L22/14H01L22/22H01L22/32H01L22/34
Inventor 杨领叶段淑卿高金德
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD