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Bipolar transistor with polysilicon emitter and method of manufacturing

A semiconductor and assembly technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., and can solve problems such as increasing the resistance of the collector area.

Pending Publication Date: 2020-06-16
NEXPERIA BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the emitter area may be reduced, this causes the current gain curve to drop to a lower collector current I C , and since the current needs to flow laterally to the collector contact on the front side, will further increase the resistance of the collector region

Method used

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  • Bipolar transistor with polysilicon emitter and method of manufacturing
  • Bipolar transistor with polysilicon emitter and method of manufacturing
  • Bipolar transistor with polysilicon emitter and method of manufacturing

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Embodiment Construction

[0030] will now refer to Figures 2a to 2l , by way of example only, a step-by-step description of a fabrication process of a bipolar transistor according to one or more embodiments is provided. In this example, the bipolar device is an NPN device. An equivalent PNP device can be realized by simply exchanging dopant N and dopant P.

[0031] Figure 2a A starting substrate 201 for manufacturing a semiconductor device according to an embodiment is shown. At this stage, a collector epitaxial layer 201 a is deposited on the top surface of the substrate 201 , so that the semiconductor device may include a low doped N collector epitaxial layer deposited on a highly doped N substrate 201 . For substrate resistivities in the range of about 1 mΩcm to 10 mΩcm, the N doping in the substrate 201 is substantially higher, for example 10000 times, than the N doping in the collector epitaxial layer. In this example, the substrate 201 needs to be highly doped to achieve a low saturation vo...

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PUM

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Abstract

The present invention relates to a bipolar transistor semiconductor device comprising: a substrate layer (not shown); a collector epitaxial layer supported by the substrate layer; a base region supported by a portion of the collector epitaxial layer; and an emitter region supported by a portion of the base region, wherein the emitter region comprises a polysilicon material.

Description

technical field [0001] The present disclosure relates to a semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device. More specifically, the present disclosure relates to bipolar junction transistor (BJT) semiconductor devices, also known as bipolar transistors. Background technique [0002] Bipolar transistors are commonly used for current amplification in analog and digital circuits. In its simplest form, as shown in FIG. 1, a discrete NPN bipolar transistor 100 includes an emitter region 101 electrically coupled to an emitter terminal 101a, a collector region 103 electrically coupled to a collector terminal 103a, and an electrical The base region 102 is coupled to the base terminal 102a. When configured in common-emitter mode, such a bipolar transistor 100 can operate as a current amplifier such that the input base current I B A small change in the output collector / emitter current I C big chan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/732H01L29/08H01L21/331
CPCH01L29/732H01L29/0804H01L29/66272H01L29/7322H01L29/47H01L29/7375
Inventor 斯特凡·伯格伦德斯特芬·霍兰
Owner NEXPERIA BV
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