Preparation method of high-performance memristor

Abstract

The invention discloses a preparation method of a high-performance memristor. The method comprises the following steps: assembling a single-layer colloid microsphere array on low-resistance silicon toobtain a sample wafer; carrying out dry etching on the sample wafer, conical columns appearing on the low-resistance silicon under the colloid microsphere array generate, and stopping etching when the colloid microsphere array is reduced to a certain size or is completely etched; preparing an insulating layer on the sample wafer, and preparing a metal layer on the insulating layer; and leading out electrodes from the bottom low-resistance silicon layer and the top metal layer respectively. According to the method, the colloid microsphere array is used as a mask plate, dry etching is adopted,and the three-dimensional conical column array with the slope is directly prepared on the precisely polished low-resistance silicon surface; and compared with wet etching, the method can better guarantee that the roughness of the three-dimensional pattern surface is small, the pattern uniformity is good, and the spatial parallelism of the array is high.

Description

technical field [0001] The invention relates to the field of non-volatile memory storage devices, in particular to a method for preparing a high-performance memristor. Background technique [0002] In recent years, information technology has ushered in rapid development, which is both a huge opportunity and a challenge for the research and development of communications, computers, and storage devices. Among them, the storage device, as the storage carrier of information, is one of the core components of various electronic devices. The capacity and read / write speed of the storage medium greatly affect the calculation speed of the chip. At present, the lack of performance of storage media is mainly reflected in two aspects: capacity and speed: the current wide use of the Internet in commercial and civilian use forces a rapid increase in the capacity of storage media, and storage media based on semiconductor transistors are about to reach its capacity. The physical limit makes...

AI Technical Summary

Problems solved by technology

The principle and design of memristors are relatively mature, but due to the limitation of micro-nano processing technology or processing cost, it is still difficult to manufacture large-area memristors with submicron or nanoscale unit sizes, especially those with submicron or nanoscale tips. Memristor cells with topography are difficult to prepare, which restricts the storage capacity, contrast between low-resistance and high-resistance states of memristors, and the response speed of memristors, hindering its commercial development.

[0005] In addition, the existing technology uses microsphere arrays to manufacture masks with through holes, and uses wet etching to form three-dimensional cone-shaped columns, which makes the surface of the three-dimensional image rougher and the pattern uniformity is not good

Images